Low contact resistance in epitaxial graphene devices for quantum metrology
Source abstract
Abstract
We investigate Ti/Au contacts to monolayer epitaxial graphene on SiC (0001) for applications in quantum resistance metrology. Using three-terminal measurements in the quantum Hall regime we observed variations in contact resistances ranging from a minimal value of 0.6 Ω up to 11 kΩ. We identify a major source of high-resistance contacts to be due bilayer graphene interruptions to the quantum Hall current, whilst discarding the effects of interface cleanliness and contact geometry for our fabricated devices. Moreover, we experimentally demonstrate methods to improve the reproducibility of low resistance contacts (<10 Ω) suitable for high precision quantum resistance metrology.
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Research context
OpenAlex topics: Graphene research and applications · Quantum and electron transport phenomena · Advancements in Semiconductor Devices and Circuit Design
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Chalmers University of Technology Göteborg 1 Department of Microtechnology and Nanoscience, , S-412 96, Sweden
University of New South Wales 2 School of Physics, , Sydney, NSW-2052, Australia
Linköping University Linköping 3 Department of Physics, Chemistry and Biology (IFM), , S-581 83, Sweden
National Physical Laboratory 4 , Teddington, TW11 0LW, United Kingdom
University of London 5 Department of Physics, Royal Holloway, , Egham, TW20 0EX, United Kingdom
Seoul National University 6 Department of Physics and Astronomy, , Seoul 151-747, South Korea
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