Green emission in carbon doped ZnO films
Source abstract
Abstract
The emission behavior of C-doped ZnO films, which were prepared by implantation of carbon into ZnO films, is investigated. Orange/red emission is observed for the films with the thickness of 60–100 nm. However, the film with thickness of 200 nm shows strong green emission. Further investigations by annealing bulk ZnO single crystals under different environments, i.e. Ar, Zn or C vapor, indicated that the complex defects based on Zn interstitials are responsible for the strong green emission. The existence of complex defects was confirmed by electron spin resonance (ESR) and low temperature photoluminescence (PL) measurement.
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Research context
OpenAlex topics: ZnO doping and properties · Ga2O3 and related materials · Copper-based nanomaterials and applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of New South Wales 1 School of Materials Science and Engineering, , Kensington, NSW, 2052, Australia
Northwest University 2 School of Chemical Engineering, , Xi'an 710069, China
National University of Singapore 3 Department of Materials Science and Engineering, , 119260, Singapore
Australian Nuclear Science and Technology Organization 4 , (ANSTO), New Illawarra Road, Lucas Heights, NSW 2234, Australia
Funding
Australian Research Council
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