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journal article·2018-04-01Open access

GaN epitaxial layers grown on multilayer graphene by MOCVD

Tianbao Li, Chenyang Liu, Zhe Zhang, Bin Yu, Hailiang Dong, Wei Jia, Zhigang Jia, Chunyan Yu, Lin Gan, Bingshe Xu

AIP Advances· Volume 8· Issue 4
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Source abstract

Abstract

In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.
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Research context

NanomaterialsMaterials processing

OpenAlex topics: GaN-based semiconductor devices and materials · Graphene research and applications · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Key Laboratory of Interface Science and Engineering in Advanced Materials, Taiyuan University of Technology, Ministry of Education 1 , Taiyuan 030024, China

College of Materials Science and Engineering, Taiyuan University of Technology 2 , Taiyuan 030024, China

School of Materials Science and Engineering, Huazhong University of Science and Technology 3 , Wuhan 430074, China

State Key Laboratory of Material Processing and Die and Mould Technology, Huazhong University of Science and Technology 4 , Wuhan 430074, China

Institute of Atomic and Molecular Science, Shaanxi University of Science and Technology 5 , Xi’an 710021, China

Funding

National Natural Science Foundation of China

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