GaAs/Ge/Si epitaxial substrates: Development and characteristics
Source abstract
Abstract
We developed high quality 2-inch GaAs/Ge/Si (100) epitaxial substrates, which may be used instead of GaAs monolithic substrates for fabrication of solar cells, photodetectors, LEDs, lasers, etc. A 200–300 nm Ge buffer layer was grown on Si substrates using the HW-CVD technique at 300°C, a tantalum strip heated to 1400°C was used as the “hotwire”. The MOCVD method was used to grow a 1 μ GaAs layer on a Ge buffer. The TDD in the GaAs layers did not exceed (1–2)∙105 cm-2 and the surface RMS roughness value was under 1 nm.
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Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · Photonic and Optical Devices · Thin-Film Transistor Technologies
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Russian Academy of Sciences 1 Institute for Physics of Microstructures, , GSP-105, Nizhny Novgorod, Russia
Lobachevski State University 2 , 23 Gagarin Ave., 603950, Nizhny Novgorod, Russia
Russian Academy of Sciences 3 Prokhorov General Physics Institute, , 38 Vavilov st., 119991, Moscow, Russia
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