DataVXAIP AdvancesPaper
journal article·2017-12-01Open access

Investigation on high-efficiency Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications

Lei Zhang, Pingjuan Niu, Yuqiang Li, Minghui Song, Jianxin Zhang, Pingfan Ning, Peizhuan Chen

AIP Advances· Volume 7· Issue 12
Publisher pageOpen full text
Source abstract

Abstract

Ga0.51In0.49P/In0.01Ga0.99As/Ge triple-junction solar cells for space applications were grown on 4 inch Ge substrates by metal organic chemical vapor deposition methods. The triple-junction solar cells were obtained by optimizing the subcell structure, showing a high open-circuit voltage of 2.77 V and a high conversion efficiency of 31% with 30.15 cm2 area under the AM0 spectrum at 25 °C. In addition, the In0.01Ga0.99As middle subcell structure was focused by optimizing in order to improve the anti radiation ability of triple-junction solar cells, and the remaining factor of conversion efficiency for middle subcell structure was enhanced from 84% to 92%. Finally, the remaining factor of external quantum efficiency for triple-junction solar cells was increased from 80% to 85.5%.
Source: crossref · Quality: baseline

Research context

Materials processing

OpenAlex topics: solar cell performance optimization · Chalcogenide Semiconductor Thin Films · Quantum Dots Synthesis And Properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

School of Electrical Engineering and Automation, Tianjin Key Laboratory of Advanced Electrical Engineering and Energy Technology, Tianjin Polytechnic University 1 , Tianjin 300387, China

Tianjin San’an Optoelectronics Co., LTD. 2 , Tianjin 300384, China

Institute of Photoelectronics, Tianjin Key Laboratory of Photoelectronic Thin-film Devices and Technique, Nankai University 3 , Tianjin 300071, China

Funding

Open Project of State Key Laboratory of Supermaterials · The Third Generation Semiconductor Multi Phyiscs Field Analysis and Detection Clould Service Platform · Tianjin Basic Science Foundatiion · National Natural Science Foundation of China · Natural Science Foundation of Tianjin City

References (26)

Show source-provided references
1. J. Phys. Chem. C · 2017 · 121 · 139310.1021/acs.jpcc.6b07991 ↗
2. Appl. Phys. Express · 2017 · 10 · 07230110.7567/apex.10.072301 ↗
3. Appl. Surf. Sci · 2016 · 389 · 67310.1016/j.apsusc.2016.07.163 ↗
4. Semicond. Sci. Technol. · 2017 · 32 · 01500610.1088/1361-6641/32/1/015006 ↗
5. Appl. Energ · 2017 · 202 · 75510.1016/j.apenergy.2017.05.182 ↗
6. Chin. Phys. Lett. · 2017 · 34 · 07610610.1088/0256-307x/34/7/076106 ↗
7. Opt. Quant. Electron · 2016 · 48 · 51010.1007/s11082-016-0774-9 ↗
8. Appl. Phys. Lett. · 2007 · 91 · 02350210.1063/1.2753729 ↗
9. Sci. Rep. · 2017 · 7 · 198510.1038/s41598-017-02141-0 ↗
10. J. Korean. Phys. Soc · 2016 · 68 · 79210.3938/jkps.68.792 ↗
11. Energ. Convers. Manage · 2013 · 76 · 17710.1016/j.enconman.2013.07.048 ↗
12. Energ. Convers. Manage · 2016 · 112 · 4910.1016/j.enconman.2016.01.008 ↗
13. IEEE T. Electron. Dev · 2016 · 63 · 159410.1109/ted.2016.2529698 ↗
14. Appl. Surf. Sci · 2013 · 269 · 13810.1016/j.apsusc.2012.09.166 ↗
15. Prog. Photovolt: Res. Appl. · 2013 · 21 · 34410.1002/pip.1215 ↗
16. Jpn. J. Appl. Phys. · 2011 · 50 · 09230210.7567/jjap.50.092302 ↗
17. Chin. J. Power. Sources · 2015 · 39 · 1340
18. 2010
19. Sci. Rep. · 2016 · 6 · 3916310.1038/srep39163 ↗
20. Appl. Phys. Lett. · 2007 · 90 · 18351610.1063/1.2734507 ↗
21. Acta Phys. Sin. · 2014 · 63 · 1880110.7498/aps.63.018801 ↗
22. Acta Energiae Sol. Sin. · 2010 · 31 · 1568
23. Adv. Sci. Technol. · 2010 · 74 · 22510.4028/www.scientific.net/ast.74.225 ↗
24. Sol. Energy · 2005 · 79 · 7810.1016/j.solener.2004.09.018 ↗
25. J. Appl. Phys. · 1997 · 82 · 216410.1063/1.366024 ↗
26. J. Appl. Phys. · 2009 · 105 · 04450410.1063/1.3079522 ↗