journal article·2018-02-01Open access

Carbon doping induced Ge local structure change in as-deposited Ge2Sb2Te5 film by EXAFS and Raman spectrum

Tao Li, Liangcai Wu, Xinglong Ji, Yonghui Zheng, Guangyu Liu, Zhitang Song, Jianjun Shi, Min Zhu, Sannian Song, Songlin Feng

AIP Advances· Volume 8· Issue 2

Abstract

The local structure change of Ge induced by carbon doping in as-deposited Ge2Sb2Te5 films were studied by extended X-ray absorption fine structure and Raman spectrum. Ge-C bonds are formed at the expense of reducing the coordination of Ge-Ge and Ge-Te bonds, and make the local structure of Ge to be a well-defined tetrahedral geometry, which increases the rigidity of amorphous network and reduces the number of ABAB rings, thus the crystallization temperature of carbon-doped Ge2Sb2Te5 (CGST) films are enhanced. The reduced proportion of the tetrahedral units GeTe4−nGen (n = 1, 2) caused by carbon doping accounts for the weaker Raman peak intensity at ∼124 cm−1 in CGST films. Meanwhile, the impact of doping carbon on the crystalline structure of CGST films were investigated by high resolution transmission electron microscope.
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Research context

OpenAlex topics: Phase-change materials and chalcogenides · Chalcogenide Semiconductor Thin Films · Nonlinear Optical Materials Studies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Micro-System and Information Technology, Chinese Academy of Sciences 1 , 200050 Shanghai, China

University of the Chinese Academy of Sciences 3 , Beijing 100049, China

State Key Laboratory for Modification of Chemical Fibers and Polymer Materials, College of Science, Donghua University 2 , Shanghai 201620, China

Singapore University of Technology and Design 4 , 8 Somapah Road, 487372, Singapore

Funding

National Key Research and Development Program of China · Strategic Priority Research Program of Chinese Academy of Sciences

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