Atomic layer deposition and properties of mixed Ta2O5 and ZrO2 films
Source abstract
Abstract
Thin solid films consisting of ZrO2 and Ta2O5 were grown by atomic layer deposition at 300 °C. Ta2O5 films doped with ZrO2, TaZr2.75O8 ternary phase, or ZrO2 doped with Ta2O5 were grown to thickness and composition depending on the number and ratio of alternating ZrO2 and Ta2O5 deposition cycles. All the films grown exhibited resistive switching characteristics between TiN and Pt electrodes, expressed by repetitive current-voltage loops. The most reliable windows between high and low resistive states were observed in Ta2O5 films mixed with relatively low amounts of ZrO2, providing Zr to Ta cation ratio of 0.2.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Semiconductor materials and devices · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of Helsinki 1 Department of Chemistry, , P.O. Box 55, FI-00014 Helsinki, Finland
University of Tartu 2 Institute of Physics, , W. Ostwald 1, 50411 Tartu, Estonia
University of Helsinki 3 Accelerator Laboratory, Department of Physics, , P.O. Box 43 (A.I. Virtasen aukio 1), FI-00014 Helsinki, Finland
Slovak Academy of Sciences 4 Institute of Electrical Engineering, , Dúbravská Cesta 9, 841 04 Bratislava, Slovakia
Funding
Finnish Excellence Centre for Atomic Layer Deposition · Eesti Teadusagentuur · Eesti Teaduste Akadeemia
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