Copper oxide resistive switching memory for e-textile
Source abstract
Abstract
A resistive switching memory suitable for integration into textiles is demonstrated on a copper wire network. Starting from copper wires, a Cu/CuxO/Pt sandwich structure is fabricated. The active oxide film is produced by simple thermal oxidation of Cu in atmospheric ambient. The devices display a resistance switching ratio of 102 between the high and low resistance states. The memory states are reversible and retained over 107 seconds, with the states remaining nondestructive after multiple read operations. The presented device on the wire network can potentially offer a memory for integration into smart textile.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Photoreceptor and optogenetics research
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
NASA Ames Research Center Center for Nanotechnology, , Moffett Field, California 94035, USA
References (38)
Show source-provided references
1. Proc. IEEE · 2003 · 91 · 199510.1109/JPROC.2003.819612 ↗
2. Nature · 2008 · 451 · 80910.1038/nature06601 ↗
3. Appl. Phys. Lett. · 2009 · 95 · 22330510.1063/1.3269907 ↗
4. IEEE Trans. Inf. Technol. Biomed. · 2005 · 9 · 33710.1109/TITB.2005.854512 ↗
5. IEEE Pervasive Comput. · 2009 · 8 · 6210.1109/MPRV.2009.32 ↗
6. IEEE Trans. Inf. Technol. Biomed. · 2010 · 14 · 43610.1109/TITB.2009.2036165 ↗
7. IEEE Trans. Electron Device · 2005 · 52 · 26910.1109/TED.2004.841331 ↗
8. IEEE Electron Device Lett. · 2004 · 25 · 29510.1109/LED.2004.826537 ↗
9. Nat. Mater. · 2007 · 6 · 35710.1038/nmat1884 ↗
10. IEEE Electron Device Lett. · 2010 · 31 · 74010.1109/LED.2010.2048993 ↗
11. Nano Lett. · 2010 · 10 · 288410.1021/nl1009662 ↗
12. Nanotechnology · 2010 · 21 · 41200110.1088/0957-4484/21/41/412001 ↗
13. IEEE Electron Device Lett. · 2007 · 28 · 36610.1109/LED.2007.894652 ↗
14. IEEE Electron Device Lett. · 2010 · 31 · 96610.1109/LED.2010.2052091 ↗
15. IEEE Electron Device Lett. · 2008 · 29 · 33110.1109/LED.2008.918253 ↗
16. IEEE Electron Device Lett. · 2010 · 31 · 12610.1109/LED.2009.2037593 ↗
17. IEEE Electron Device Lett. · 2010 · 31 · 47610.1109/LED.2010.2041893 ↗
18. Appl. Phys. Lett. · 2011 · 98 · 19210210.1063/1.3589374 ↗
19. Mater. Exp.
20. 1958
21. J. Cryst. Growth · 2004 · 268 · 59010.1016/j.jcrysgro.2004.04.097 ↗
22. Nanotechnology · 2005 · 16 · 8810.1088/0957-4484/16/1/018 ↗
23. Mater. Today · 2008 · 11 · 2810.1016/S1369-7021(08)70119-6 ↗
24. Nat. Mater. · 2007 · 6 · 83310.1038/nmat2023 ↗
25. Appl. Phys. Lett. · 2007 · 91 · 12351710.1063/1.2789678 ↗
26. Appl. Phys. Lett. · 2007 · 90 · 04210710.1063/1.2436720 ↗
27. Appl. Phys. Lett. · 2007 · 91 · 12351710.1063/1.2789678 ↗
28. Appl. Phys. Lett. · 2008 · 92 · 01350310.1063/1.2828864 ↗
29. J. Vac. Sci. Technol. B · 2008 · 26 · 103010.1116/1.2927922 ↗
30. Appl. Phys. Lett. · 2008 · 92 · 01350310.1063/1.2828864 ↗
31. Thin Solid Films · 2008 · 517 · 96710.1016/j.tsf.2008.08.184 ↗
32. Appl. Phys. Lett. · 2009 · 95 · 09210810.1063/1.3202394 ↗
33. Appl. Phys. Lett. · 2009 · 94 · 10210710.1063/1.3098071 ↗
34. J. Appl. Phys. · 2010 · 108 · 11411010.1063/1.3518514 ↗
35. IEEE Electron Device Lett. · 2011 · 32 · 67110.1109/LED.2011.2114320 ↗
36. Appl. Phys. Lett. · 2009 · 94 · 21350210.1063/1.3142392 ↗
37. Appl. Phys. A · 2011 · 102 · 101510.1007/s00339-011-6281-8 ↗
38. IEEE Symp. on VLSI Tech . · 2010 · 89