Analysis of displacement damage mechanism and simulation proton irradiation on GaAs
Source abstract
Abstract
GaAs is an important material for preparing power supply for space vehicles, satellites, and space systems. To study the displacement damage of GaAs material caused by protons in the space environment, in this article, the Monte Carlo software Geant4 was used to simulate the transport process of space protons in GaAs; calculate the non-ionizing energy loss (NIEL) of protons with different energies; and obtain the species, energy range, and proportion of primary knock-on atom produced by proton irradiation with different energies. The results show that with the increase in the incident proton energy, the probability of elastic collision decreases and the probability of inelastic collision increases. The main source of displacement damage changes from elastic collision to inelastic collision. The radiation damage of low energy protons is serious at the end of the range, while that of high energy protons is serious at the beginning and end of the range. With the increase in the proton energy, the number of displaced atoms increases and the NIEL changes slowly. This provides a theoretical reference for the reliable operation of spacecraft.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Radiation Effects in Electronics · Radiation Therapy and Dosimetry · solar cell performance optimization
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Electrical and Electronic Engineer, North China Electric Power University , Beijing 102206, China
References (29)
Show source-provided references
1. Study on intelligent management technology for spacecraft electrical power10.3969/j.issn.1679-8748.2012.04.030 ↗
2. 1955 · 122
3. Research status and development trend of GaAs triple junction solar cells
4. A review of the space environment effects on spacecraft in different orbits10.1109/ACCESS.2019.2927811 ↗
5. LEO radiation environment and the design of the micro-channel-plate x-ray telescope camera on-board the SVOM mission10.1117/12.925458 ↗
6. Low Earth orbit space charged particle radiation environment and its influence on spacecraft
7. Proton irradiation induced GaAs solar cell performance degradation simulations using a physics-based model10.1016/j.solmat.2021.110971 ↗
8. Numerical simulation of GaAs solar cells aging under electron and proton irradiation10.1109/JPHOTOV.2019.2939886 ↗
9. Displacement damage effects in irradiated semiconductor devices10.1109/TNS.2013.2261316 ↗
10. Experimental re-evaluation of proton penetration ranges in GaAs and InGaP10.1088/1361-6463/abce7d ↗
11. Research progress of irradiation damage for GaAs materials and devices10.12677/APP.2018.82017 ↗
12. Geant4 simulation of proton displacement damage in GaAs10.7538/yzk.2017.youxian.0636 ↗
13. Modelling solar cell degradation in space: A comparison of the NRL displacement damage dose and the JPL equivalent fluence approaches10.1002/pip.357 ↗
14. NIEL and damage correlations for high-energy protons in gallium arsenide devices10.1109/23.983182 ↗
15. Analysis of end-of-life performance for proton-irradiated triple-junction space solar cell
16. Analysis for radiation-resistance of InGaP and GaAs sub-cells for InGaP/GaAs/Ge 3-junction solar cells
17. Effects of secondary particles on the total dose and the displacement damage in space proton environments10.1109/23.907581 ↗
18. Proton nonionizing energy loss (NIEL) for device applications10.1109/TNS.2003.820760 ↗
19. Non-ionizing energy loss of low energy proton in semiconductor materials Si and GaAs10.7498/aps.57.1266 ↗
20. Numerical investigation of non-ionizing energy loss of proton at an energy range of 300 eV to 1 GeV in silicon10.7498/aps.63.066102 ↗
21. Algorithm development in computational materials science10.1007/s11837-013-0846-2 ↗
22. Experimental study on displacement damage of aerospace bipolar and optocoupler devices10.3969/j.issn.1673-1379.2017.01.014 ↗
23. NEMO: A code to compute NIEL of proton, neutrons, electrons, and heavy ions10.1109/TNS.2006.880926 ↗
24. Direct antisite formation in electron irradiation of GaAs10.1103/physrevlett.74.2721 ↗
25. Non-ionizing energy loss of middle energy proton in Si and GaAs10.3321/j.issn:0254-3052.2006.11.011 ↗
26. On the use of SRIM for computing radiation damage exposure10.1016/j.nimb.2013.05.008 ↗
27. Geant4-based simulation of the energy and angle straggling of proton on thin films10.13491/j.cnki.issn.1004-714x.2014.04.003 ↗
28. Alpha particle nonionizing energy loss (NIEL)10.1109/TNS.2001.839150 ↗
29. M. J. Boschini, P. G. Rancoita, and M. Tacconi, SR-NIEL calculator: Screened relativistic (SR) treatment for calculating the displacement damage and nuclear stopping powers for electrons, protons, light-and heavy-ions in materials [EB/OL]; accessed 30 October 2017, see http://www.sr-niel.org/.