journal article·2022-11-01Open access

Band valley modification under strain in monolayer WSe2

Thi Nhan Tran, Minh Triet Dang, Quang Huy Tran, Thi Theu Luong, Van An Dinh

AIP Advances· Volume 12· Issue 11

Abstract

We study the band valley modification induced by isotropic strain in monolayer WSe2 using the non-local van der Waals density functionals theory including the spin–orbit coupling effect. The dominant contributions of orbitals to the band extrema, spin splitting, and exciton diversity in monolayer WSe2 are visually displayed. The vertical shift of the d and p partial orbitals of W and Se atoms, respectively, at band edges under strain results in a notable reduction of the bandgap. Under tensile strain, the deformations of the band valleys lead to an additional appearance of optical excitons and the disappearance of momentum excitons. Therefore, the experimental observations of the changes in the radiation spectra such as the redshift of A and B excitons, blueshift of C and D excitons, enhancement of intensity, localization, and symmetrization of the exciton resonances can be explained thoroughly. Under compression, the band valley modification may lead to an additional appearance of momentum excitons and the disappearance of optical excitons. The compression is predicted to cause the blueshift of A and B excitons while it brings the redshift to C and D excitons. An asymmetric broadening and intensity de-enhancement of the exciton resonances are also found when a compression strain is applied. The modification of the band valleys can be explained by the enhancement/reduction of hybridization between orbitals under strain. These results offer new perspectives to comprehend the appearance/disappearance of the excitons in monolayer transition metal dichalcogenide materials upon mechanical perturbation.
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Research context

OpenAlex topics: 2D Materials and Applications · MXene and MAX Phase Materials · Perovskite Materials and Applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Faculty of Fundamental Sciences, Hanoi University of Industry 1 , 298 Cau Dien Street, Hanoi, Vietnam

School of Education, Can Tho University 2 , 3-2 Road, Can Tho City 900000, Vietnam

Faculty of Physics, Hanoi Pedagogical University 2 3 , Nguyen Van Linh Street, Xuan Hoa, Vinh Phuc, Vietnam

Hoa Binh University 4 , My Dinh 2, Nam Tu Liem, Hanoi, Vietnam

Department of Precision Engineering, Graduate School of Engineering, Osaka University 5 , 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan

Funding

Hanoi University of Industry · Vietnam National Foundation for Science and Technology Development

References (52)

Show source-provided references
1. Occupied and unoccupied electronic band structure of WSe210.1103/physrevb.55.10400 ↗
2. Electronic properties of bulk and monolayer TMDs: Theoretical study within DFT framework (GVJ-2e method)10.1002/pssa.201700218 ↗
3. Band alignment of two-dimensional transition metal dichalcogenides: Application in tunnel field effect transistors10.1063/1.4817409 ↗
4. Wafer scale synthesis of monolayer WSe2: A multi functional photocatalyst for efficient overall pure water splitting10.1016/j.nanoen.2018.06.047 ↗
5. Band offsets and heterostructures of two-dimensional semiconductors10.1063/1.4774090 ↗
6. Spin–orbit coupling in the band structure of monolayer WSe210.1088/0953-8984/27/18/182201 ↗
7. A comprehensive study in carrier mobility and artificial photosynthetic properties in group VI B transition metal dichalcogenide monolayers10.1039/c8ta01943f ↗
8. Exciton physics and device application of two-dimensional transition metal dichalcogenide semiconductors10.1038/s41699-018-0074-2 ↗
9. Experimental evidence for dark excitons in monolayer WSe210.1103/physrevlett.115.257403 ↗
10. Magnetic brightening and control of dark excitons in monolayer WSe210.1038/nnano.2017.105 ↗
11. Tightly bound excitons in monolayer WSe210.1103/PhysRevLett.113.026803 ↗
12. Photoluminescence emission and Raman of monolayer MoS2, MoSe2, and WSe210.1364/oe.21.004908 ↗
13. Chiral light-matter interactions using spin-valley states in transition metal dichalcogenides10.1364/oe.27.021367 ↗
14. Epitaxial stitching and stacking growth of atomically thin transition-metal dichalcogenides (TMDCs) heterojunctions10.1002/adfm.201603884 ↗
15. 2D materials and van der Waals heterostructures10.1126/science.aac9439 ↗
16. Valley polarization in MoS2 monolayers by optical pumping10.1038/nnano.2012.95 ↗
17. Tightly bound trions in monolayer MoS210.1038/nmat3505 ↗
18. Spin-orbit coupling, quantum dots, and qubits in monolayer transition metal dichalcogenides10.1103/physrevx.4.011034 ↗
19. Valley-selective circular dichroism of monolayer molybdenum disulphide10.1038/ncomms1882 ↗
20. Observation of intervalley quantum interference in epitaxial monolayer tungsten diselenide10.1038/ncomms9180 ↗
21. Electronic properties of single-layer and multilayer transition metal dichalcogenides MX2 (M = Mo, W and X = S, Se)10.1002/andp.201400128 ↗
22. Roadmap on finding chiral valleys: Screening 2D materials for valleytronics10.1088/2399-1984/aac9d7 ↗
23. Strain tuning of excitons in monolayer WSe210.1103/physrevb.98.115308 ↗
24. Reversible uniaxial strain tuning in atomically thin WSe210.1088/2053-1583/3/2/021011 ↗
25. Strain-engineered growth of two-dimensional materials10.1038/s41467-017-00516-5 ↗
26. Strain-induced indirect to direct bandgap transition in multilayer WSe210.1021/nl501638a ↗
27. Strain control of exciton–phonon coupling in atomically thin semiconductors10.1021/acs.nanolett.7b04868 ↗
28. Manipulation of electronic structure in WSe2 monolayer by strain10.1016/j.ssc.2016.07.003 ↗
29. Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-MX2 semiconductors (M = Mo, W; X = S, Se, Te)10.1103/physrevb.85.033305 ↗
30. Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors10.1103/physrevb.84.153402 ↗
31. Chemical accuracy for the van der Waals density functional10.1088/0953-8984/22/2/022201 ↗
32. Van der Waals density functionals applied to solids10.1103/physrevb.83.195131 ↗
33. From ultrasoft pseudopotentials to the projector augmented-wave method10.1103/physrevb.59.1758 ↗
34. Efficient iterative schemes for ab initio total energy calculations using a plane-wave basis set10.1103/physrevb.54.11169 ↗
35. Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set10.1016/0927-0256(96)00008-0 ↗
36. Efficient implementation of a van der Waals density functional: Application to double-wall carbon nanotubes10.1103/PhysRevLett.103.096102 ↗
37. Higher-accuracy van der Waals density functional10.1103/physrevb.82.081101 ↗
38. Semiempirical GGA-type density functional constructed with a long-range dispersion correction10.1002/jcc.20495 ↗
39. Generalized gradient approximation made simple10.1103/physrevlett.77.3865 ↗
40. Preparation and properties of the single crystalline AB2-type selenides and tellurides of niobium, tantalum, molybdenum and tungsten10.1016/0022-1902(62)80178-x ↗
41. Strong spin-orbit splitting and magnetism of point defect states in monolayer WSe210.1103/physrevb.94.195425 ↗
42. Large area growth and electrical properties of p-type WSe2 atomic layers10.1021/nl504256y ↗
43. Phys. Rev. B · 2016 · 93 · 19531810.1103/physrevb.93.195318 ↗
44. Many-body exciton and intervalley correlations in heavily electron-doped WSe2 monolayers10.1021/acs.nanolett.1c04217 ↗
45. Resonant internal quantum transitions and femtosecond radiative decay of excitons in monolayer WSe210.1038/nmat4356 ↗
46. Dark excitons in transition metal dichalcogenides10.1103/physrevmaterials.2.014002 ↗
47. Observation of biexcitons in monolayer WSe210.1038/nphys3324 ↗
48. Theory of neutral and charged excitons in monolayer transition metal dichalcogenides10.1103/physrevb.88.045318 ↗
49. Optical proper-ties of atomically thin transition metal dichalcogenides: Observations and puzzles10.1515/nanoph-2016-0165 ↗
50. Fine structure and lifetime of dark excitons in transition metal dichalcogenide monolayers10.1103/physrevb.96.155423 ↗
51. Structural modification enhances the optoelectronic properties of defect blue phosphorene thin films10.1088/1361-648x/ac68be ↗
52. Evidence of indirect gap in monolayer WSe210.1038/s41467-017-01012-6 ↗