Microstructure and mechanical properties of atomic layer deposited alumina doped zirconia
Source abstract
Abstract
Atomic layer deposited alumina doped zirconia films can exhibit advanced mechanical properties with potential to increase the suitability of ZrO2 films for mechanically resilient coatings. In the present study, Al2O3-doped ZrO2 films were deposited on a TiN substrate to thicknesses around 100 nm at 300 °C. A zirconia film containing 4.6 mol. % Al2O3 was crystallized in its tetragonal polymorph. Increasing the Al2O3 content up to 5.8 and 8.2 mol. % stabilized the cubic polymorph in the ZrO2-based films. The films with even higher Al2O3 contents remained amorphous. All the crystalline films possessed a preferential grain orientation to extents differing beneath the surface and in the vicinity of the substrate. The most rigid films with hardness up to 15 GPa and elastic modulus above 170 GPa could be obtained when crystallized in the form of cubic ZrO2 stabilized upon doping with Al2O3. For all the crystalline films, the hardness and elastic modulus increased near the substrate.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor materials and devices · Metal and Thin Film Mechanics · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
University of Tartu , Institute of Physics, W. Ostwaldi Str. 1, 50411 Tartu, Estonia
Funding
European Regional Development Fund · Estonian Research Competency Council · European Observation Network for Territorial Development and Cohesion
References (35)
Show source-provided references
1. Thin Solid Films · 2020 · 713 · 13836810.1016/j.tsf.2020.138368 ↗
2. Appl. Phys. Lett. · 2008 · 93 · 03351110.1063/1.2958238 ↗
3. J. Materiomics · 2015 · 1 · 28510.1016/j.jmat.2015.07.009 ↗
4. InfoMat · 2020 · 2 · 26110.1002/inf2.12077 ↗
5. IEEE Electron Device Lett. · 2012 · 33 · 80310.1109/led.2012.2192252 ↗
6. Nanomaterials · 2020 · 10 · 206910.3390/nano10102069 ↗
7. J. Appl. Phys. · 2017 · 121 · 18450510.1063/1.4983006 ↗
8. J. Vac. Sci. Technol. A · 2013 · 31 · 01A11910.1116/1.4765047 ↗
9. Chem. Mater. · 2003 · 15 · 266810.1021/cm021303q ↗
10. Materials · 2019 · 12 · 285610.3390/ma12182856 ↗
11. J. Phys. Chem. Solids · 2018 · 122 · 5110.1016/j.jpcs.2018.06.003 ↗
12. Mater. Sci. Semicond. Process. · 2006 · 9 · 100610.1016/j.mssp.2006.10.033 ↗
13. 2015 · 472
14. ECS J. Solid State Sci. Technol. · 2015 · 4 · Q3510.1149/2.0051505jss ↗
15. J. Vac. Sci. Technol. A · 2016 · 34 · 05151010.1116/1.4961113 ↗
16. Sens. Acuators, A · 2006 · 130-131 · 41910.1016/j.sna.2006.01.029 ↗
17. Thin Solid Films · 2016 · 600 · 11910.1016/j.tsf.2016.01.024 ↗
18. Nachr. Ges. Wiss. Goettingen, Math.-Phys. Kl. · 1918 · 98
19. J. Vac. Sci. Technol. A · 2020 · 38 · 02240610.1116/1.5131563 ↗
20. J. Vac. Sci. Technol. A · 2020 · 38 · 02240810.1116/1.5134743 ↗
21. J. Appl. Phys. · 2016 · 119 · 06530410.1063/1.4941533 ↗
22. Sci. Rep. · 2016 · 6 · 2625410.1038/srep26254 ↗
23. Diffus. Fundam. · 2008 · 8 · 7.1
24. J. Cryst. Growth · 2001 · 231 · 26210.1016/s0022-0248(01)01449-x ↗
25. J. Vac. Sci. Technol. A · 2012 · 30 · 01A14910.1116/1.3669518 ↗
26. 2017
27. J. Cryst. Growth · 2000 · 220 · 10510.1016/s0022-0248(00)00831-9 ↗
28. J. Comput. Chem. · 2015 · 36 · 910.1002/jcc.23761 ↗
29. J. Cryst. Growth · 2003 · 249 · 25110.1016/s0022-0248(02)02133-4 ↗
30. Thin Solid Films · 2012 · 525 · 610.1016/j.tsf.2012.10.061 ↗
31. Optik · 2018 · 159 · 30510.1016/j.ijleo.2018.01.078 ↗
32. J. Mater. Res. · 2004 · 19 · 310.1557/jmr.2004.19.1.3 ↗
33. Materials · 2019 · 12 · 167710.3390/ma12101677 ↗
34. Acta Biomater. · 2010 · 6 · 99010.1016/j.actbio.2009.09.021 ↗
35. J. Alloys Compd. · 2019 · 792 · 125510.1016/j.jallcom.2019.04.105 ↗