A comparative study of Schottky barrier heights and charge transport mechanisms in 3C, 4H, and 6H silicon carbide polytypes
Abstract
Research context
OpenAlex topics: Semiconductor materials and interfaces · Semiconductor materials and devices · Advancements in Semiconductor Devices and Circuit Design
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Affiliations
Applied Microelectronics Laboratory (AMEL), Electronics Department, Faculty of Technology, Djillali Liabes University of Sidi Bel Abbes 1 , BP 89, 22000 Sidi Bel Abbes,
Telecommunications and Smart Systems Laboratory, University of Djelfa 2 , P.O. Box 3117, Djelfa 17000,
Faculty of Science and Technology, Tissemsilt University 3 , 38000 Tissemsilt,
INFN-Laboratori Nazionali di Frascati 4 , Via E. Fermi 54, 00044 Frascati,
Centre de Développement des Energies Renouvelables, Unité de Recherche Appliquée en Energies Renouvelables, URAER, CDER 5 , Ghardaïa 47133,
School of ICT, Faculty of Engineering, Design and Information & Communications Technology (EDICT), Bahrain Polytechnic 6 , P.O. Box 33349, Isa Town,
Jadara University Research Center, Jadara University 7 , P.O. Box 733, Irbid 21110,
Department of Communications and Electronics, Delta Higher Institute of Engineering and Technology 8 , Mansoura 35111,
9 Applied Science Research Center. Applied Science Private University, Amman, Jordan
Faculty of Artificial Intelligence, Delta University for Science and Technology 10 , Mansoura,
Department of Computer Sciences, College of Computer and Information Sciences, Princess Nourah Bint Abdulrahman University 11 , P.O. Box 84428, Riyadh 11671,
Funding
Princess Nourah Bint Abdulrahman University