Tunnel magnetoresistance exceeding 100% in magnetic tunnel junctions using Mn-based tetragonal alloy electrodes with perpendicular magnetic anisotropy
Source abstract
Abstract
We studied MgO barrier magnetic tunnel junctions (MTJs) comprising perpendicularly magnetized MnGa and FeCoB electrodes. In those perpendicular (p-) MTJs, we utilized thin metastable bcc CoMn alloys as an interlayer between MnGa and MgO to enhance the tunnel magnetoresistance (TMR) effect. Moreover, we investigated the effect of a thin Mg interlayer between MnGa and CoMn. Owing to the interlayer engineering, we achieved a TMR ratio over 100%, the highest value observed for p-MTJs with a tetragonal MnGa electrode. Our study contributes to the further development of spintronic devices using p-MTJs with various Mn-based tetragonal alloy electrodes.
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Research context
OpenAlex topics: Magnetic properties of thin films · ZnO doping and properties · Heusler alloys: electronic and magnetic properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
WPI Advanced Institute for Materials Research, Tohoku University 1 , Sendai 980-8577, Japan
Advanced Science Research Center, Japan Atomic Energy Agency 2 , Tokai 319-1195, Japan
Center for Science and Innovation in Spintronics (CSIS), Core Research Cluster (CRC), Tohoku University 3 , Sendai 980-8577, Japan
Funding
Japan Society for the Promotion of Science · Adaptable and Seamless Technology Transfer Program Through Target-Driven R and D · Core Research for Evolutional Science and Technology
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