Influence factors and temperature reliability of ohmic contact on AlGaN/GaN HEMTs
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Semiconductor materials and devices · Metal and Thin Film Mechanics
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Affiliations
1School of Nano Technology and Nano Bionics, University of Science and Technology of China, Suzhou 215123, People’s Republic of China
2Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-Tech and Nano-Bionics, CAS, Suzhou 215123, People’s Republic of China
3Key Laboratory of Opto-Electronics Technology (Beijing University Technology), Ministry of Education, Beijing University of Technology, Beijing 100124, People’s Republic of China
4School of Materials Science and Engineering, Nanjing University of Science and Technology, Xiao Ling Wei 200, Nanjing 210094, People’s Republic of China
5Suzhou Powerhouse Electronics Co., Ltd, Suzhou 215123, People’s Republic of China
Funding
Key Research and Development Program of Jiangsu Province · National Key Research and Development Program of China · National Key Scientific Instrument and Equipment Development Projects of China · National Natural Science Foundation of China