Enhancing the blocking temperature of perpendicular-exchange biased Cr2O3 thin films using buffer layers
Source abstract
Abstract
In this study, we investigated the effect of buffer layers on the blocking temperature (TB) of perpendicular exchange bias of thin Cr2O3/Co exchange coupled films with a Ru spacer and revealed a high TB of 260 K for 20-nm-thick Cr2O3 thin films. By comparing the TB values of the 20-nm-thick Cr2O3 films on Pt and α-Fe2O3 buffers, we investigated the lattice strain effect on the TB. We show that higher TB values can be obtained using an α-Fe2O3 buffer, which is likely because of the lattice strain-induced increase in Cr2O3 magnetocrystalline anisotropy.
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Research context
OpenAlex topics: Magnetic properties of thin films · Magneto-Optical Properties and Applications · Multiferroics and related materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Tohoku University 1 Department of Electronic Engineering, Graduate School of Engineering, , Sendai 980-8579, Japan
TDK Corporation 2 Advanced Technology Development Center, , Chiba 272-0026, Japan
Japan Science and Technology Agency 3 ImPACT Program, , Tokyo 102-0076, Japan
Funding
ImPACT · Murata Fundation
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