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journal article·2020-03-01Open access

Memristor property of an amorphous Sn–Ga–O thin-film device deposited using mist chemical-vapor-deposition method

Yuta Takishita, Masaki Kobayashi, Kazuki Hattori, Tokiyoshi Matsuda, Sumio Sugisaki, Yasuhiko Nakashima, Mutsumi Kimura

AIP Advances· Volume 10· Issue 3
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Source abstract

Abstract

A memristor property of an amorphous Sn–Ga–O (α-TGO) thin-film device deposited using a mist chemical-vapor-deposition (mist-CVD) method has been found. The α-TGO device can be manufactured at a low cost because it does not include rare metals such as In. Moreover, it is expected that the α-TGO device can be manufactured at an even lower cost because the mist-CVD method is performed at atmospheric pressure. Here, the α-TGO layer was deposited using a hot-wall-type mist-CVD method. The hysteresis curve of the memristor characteristic was certainly obtained, and the electric resistances for the high- and low-resistance states were stably repeated at least 20 times. Although the switching ratio and repeatability are not sufficient in the case that it is applied to resistive random access memories, they are acceptable for some applications such as synapse elements in neuromorphic systems.
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Research context

Materials processing

OpenAlex topics: Advanced Memory and Neural Computing · Transition Metal Oxide Nanomaterials · Thin-Film Transistor Technologies

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Faculty of Science and Technology, Ryukoku University 1 , Otsu, Shiga 520-2194, Japan

Division of Information Science, NAIST (Nara Institute of Science and Technology) 2 , Ikoma, Nara 630-0192, Japan

High-Tech Research Center, Ryukoku University 3 , Otsu, Shiga 520-2194, Japan

Funding

Research Grants in the Natural Sciences from the Mitsubishi Foundation · Laboratory for Material and Structures at Tokyo Institute of Technology · Research Institute of Electrical Communication, Tohoku University · Support Center for Advanced Telecommunications Technology Research Foundation · Yazaki Memorial Foundation for Science and Technology · Grant-in-Aid for Scientific Research · Telecommunications Advancement Foundation

References (20)

Show source-provided references
1. IEEE Trans. Circuit Theory · 1971 · 18 · 50710.1109/tct.1971.1083337 ↗
2. Nature · 2008 · 453 · 8010.1038/nature06932 ↗
3. Nature · 2015 · 521 · 6110.1038/nature14441 ↗
4. Nature · 2004 · 432 · 48810.1038/nature03090 ↗
5. SID Symp. Dig. Tech. Pap. · 2008 · 39 · 62510.1889/1.3069740 ↗
6. SID Symp. Dig. Tech. Pap. · 2008 · 39 · 110.1889/1.3069591 ↗
7. IEEE Electron Device Lett. · 2010 · 31 · 96310.1109/led.2010.2052235 ↗
8. Appl. Phys. Lett. · 2006 · 89 · 11212310.1063/1.2353811 ↗
9. 183
10. 2011 · 7.4
11. Phys. Status Solidi RRL · 2008 · 2 · 10510.1002/pssr.200802017 ↗
12. Sci. Rep. · 2017 · 7 · 4432610.1038/srep44326 ↗
13. Solid-State Electron. · 2017 · 134 · 1910.1016/j.sse.2017.05.006 ↗
14. Jpn. J. Appl. Phys. · 2017 · 56 · 07030910.7567/jjap.56.070309 ↗
15. IEEE J. Electron Devices Soc. · 2017 · 6 · 10010.1109/jeds.2017.2777859 ↗
16. Sci. Rep. · 2019 · 9 · 275710.1038/s41598-019-39549-9 ↗
17. J. Cryst. Growth · 2007 · 299 · 110.1016/j.jcrysgro.2006.10.251 ↗
18. IEEE Electron Device Lett. · 2015 · 36 · 46310.1109/led.2015.2412124 ↗
19. IEICE Electron. Express · 2018 · 15 · 2017106210.1587/elex.15.20171062 ↗
20. 2019