journal article·2019-11-01Open access

Magnetic properties of bismuth substituted yttrium iron garnet film with perpendicular magnetic anisotropy

Xiuting Liu, Qinghui Yang, Ding Zhang, Yujuan Wu, Huaiwu Zhang

AIP Advances· Volume 9· Issue 11

Abstract

In this paper, the Y2Bi1Fe5O12 films were grown on substituted gadolinium gallium garnet substrate by radio frequency magnetron sputtering and their magnetic properties were investigated. We found that the 20 nm-thick film had the best perpendicular magnetic anisotropy (PMA) under the combined effect of stress-induced anisotropy and surface roughness of the film; the applied magnetic field required for its out-of-plane magnetization saturation was 90 Oe, the remanence ratio was 0.8, the coercive force was 30 Oe, and the damping constant was 3.37 × 10−3. The PMA of the films was reduced due to the relaxation of the stress as the thickness of the film increased, and the easy magnetization axis became in-plane as the thickness reached 40 nm.
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Research context

OpenAlex topics: Magneto-Optical Properties and Applications · Magnetic properties of thin films · Magnetic Properties and Applications

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Affiliations

State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China , Chengdu 610054, People’s Republic of China

Funding

National Key Research and Development Plan · National Key Scientific Instrument and Equipment Development Project · National Natural Science Foundation of China · International Cooperation Project

References (25)

Show source-provided references
1. Nat. Mater. · 2017 · 16 · 30910.1038/nmat4812 ↗
2. Appl. Surf. Sci. · 2019 · 473 · 23510.1016/j.apsusc.2018.12.053 ↗
3. Appl. Surf. Sci. · 2018 · 435 · 37710.1016/j.apsusc.2017.11.129 ↗
4. Opt. Mater. · 2019 · 91 · 26810.1016/j.optmat.2019.03.034 ↗
5. Phys. Rev. Lett. · 2013 · 111 · 21720410.1103/physrevlett.111.217204 ↗
6. J. Appl. Phys. · 2014 · 116 · 15390210.1063/1.4898161 ↗
7. Appl. Phys. Lett. · 2011 · 99 · 19251110.1063/1.3660586 ↗
8. Appl. Surf. Sci. · 2019 · 484 · 16910.1016/j.apsusc.2019.04.102 ↗
9. Appl. Phys. Lett. · 2006 · 88 · 18250910.1063/1.2199473 ↗
10. Nat. Mater. · 2010 · 9 · 98410.1038/nmat2882 ↗
11. Sci. Rep. · 2014 · 4 · 442910.1038/srep04429 ↗
12. Nat. Mater. · 2011 · 10 · 66010.1038/nmat3053 ↗
13. Adv. Electron. Mater. · 2017 · 3 · 160037610.1002/aelm.201600376 ↗
14. Phys. Rev. B · 2015 · 92 · 14441110.1103/physrevb.92.144411 ↗
15. Phys. Rev. B · 2017 · 95 · 17441110.1103/physrevb.95.174411 ↗
16. Appl. Phys. Lett. · 2012 · 101 · 15240510.1063/1.4759039 ↗
17. Acta Phys. Sin. · 2012 · 61 · 16750410.7498/aps.61.167504 ↗
18. APL Mater. · 2018 · 6 · 12111310.1063/1.5078645 ↗
19. J. Vac. Sci. Technol., A · 2001 · 19 · 256710.1116/1.1392395 ↗
20. Appl. Phys. Lett. · 2019 · 114 · 21240110.1063/1.5093265 ↗
21. Appl. Phys. Lett. · 2017 · 110 · 20240310.1063/1.4983783 ↗
22. J. Appl. Phys. · 1985 · 58 · 45410.1063/1.335645 ↗
23. Mater. Res. Lett. · 2016 · 5 · 4110.1080/21663831.2016.1195779 ↗
24. APL Mater. · 2019 · 7 · 04110410.1063/1.5090292 ↗
25. J. Appl. Phys. · 2011 · 109 · 03391710.1063/1.3544474 ↗