Zinc-oxide charge trapping memory cell with ultra-thin chromium-oxide trapping layer
Source abstract
Abstract
A functional zinc-oxide based SONOS memory cell with ultra-thin chromium oxide trapping layer was fabricated. A 5 nm CrO2 layer is deposited between Atomic Layer Deposition (ALD) steps. A threshold voltage (Vt) shift of 2.6V was achieved with a 10V programming voltage. Also for a 2V Vt shift, the memory with CrO2 layer has a low programming voltage of 7.2V. Moreover, the deep trapping levels in CrO2 layer allows for additional scaling of the tunnel oxide due to an increase in the retention time. In addition, the structure was simulated using Physics Based TCAD. The results of the simulation fit very well with the experimental results providing an understanding of the charge trapping and tunneling physics.
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Research context
OpenAlex topics: Semiconductor materials and devices · Advanced Memory and Neural Computing · Electronic and Structural Properties of Oxides
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Masdar Institute of Science and Technology Abu Dhabi 1 Institute Center for Microsystems – iMicro, Department of Electrical Engineering and Computer Science (EECS), , United Arab Emirates
Bilkent University 2 Department of Electrical and Electronics Engineering, , 06800 Ankara, Turkey
Bilkent University 3 UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, , 06800 Ankara, Turkey
References (12)
Show source-provided references
1. Non-volatile Si quantum memory with self-aligned doubly-stacked dots10.1109/TED.2002.801296 ↗
2. Nanocrystal Nonvolatile Memory Devices10.1109/TNANO.2002.1005428 ↗
3. Nanotechnology enables a new memory growth model10.1109/JPROC.2003.818323 ↗
4. Thin Film ZnO Charge-Trapping Memory Cell Grown in a Single ALD Step10.1109/LED.2012.2219493 ↗
5. ZnO-based transparent thin-film transistors10.1063/1.1542677 ↗
6. Low-voltage transparent electric-double-layer ZnO-based thin-film transistors for portable transparent electronics10.1063/1.3294325 ↗
7. Diode Behavior in Ultra-Thin Low Temperature ALD Grown Zinc-Oxide on Silicon10.1063/1.4826583 ↗
8. Energy-band parameters of atomic-layer-deposition-Al2O3/InGaAs hetero-structures10.1063/1.2218826 ↗
9. Design considerations in scaled SONOS nonvolatile memory devices10.1016/S0038-1101(00)00232-X ↗
10. Magnetoresistance of Chromium Dioxide Powder Compacts10.1103/PhysRevLett.80.3815 ↗
11. Are the surfaces of CrO2 metallic?10.1088/0953-8984/19/31/315207 ↗
12. Electronic structure of chromium oxides, CrOn− and CrOn„(n = 1 − 5) from photoelectron spectroscopy and density functional theory calculations10.1063/1.1405438 ↗