Low temperature Cu bonding with large tolerance of surface oxidation
Source abstract
Abstract
A novel method of low temperature all-Cu bonding was developed, which has a large tolerance for Cu surface oxidation and can even bond Cu with a thick oxide layer at 250 °C. It is significant for the chip level bonding because traditional methods have strict requirements for surface quality. The key process is to combine Cu nanoparticle paste and Pt-catalyzed formic acid vapor, which improved the bonding strength of oxidized-Cu by ∼78.5% and is expected to simplify the bonding process. To understand the mechanisms, interfacial analyses of the microstructure and composition were carried out, along with a surface analysis.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Electronic Packaging and Soldering Technologies · 3D IC and TSV technologies · Copper Interconnects and Reliability
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Department of Precision Engineering, School of Engineering, The University of Tokyo 1 , Bunkyo, Tokyo 113-8656, Japan
Department of Mechanical Engineering, State Key Laboratory of Tribology, Key Laboratory for Advanced Manufacturing by Materials Processing Technology, Ministry of Education of PR China, Tsinghua University 2 , Beijing 100084, P. R. China
Funding
National Natural Science Foundation of China
References (24)
Show source-provided references
1. Proc. IEEE · 2002 · 90 · 106510.1109/jproc.2002.1021571 ↗
2. Metall. Mater. Trans. B · 2010 · 41 · 82410.1007/s11663-010-9365-5 ↗
3. IEEE Trans. Electron. Packag. Manuf. · 2007 · 30 · 18210.1109/tepm.2007.899158 ↗
4. IEEE Trans. Compon., Packag., Manuf. Technol. · 2011 · 1 · 45710.1109/tcpmt.2010.2100432 ↗
5. Microelectron. Reliab. · 2012 · 52 · 37510.1016/j.microrel.2011.07.088 ↗
6. IEEE. Trans. Power. Electron. · 2017 · 32 · 708310.1109/tpel.2016.2631128 ↗
7. J. Mater. Sci.: Mater. Electron. · 2013 · 24 · 259310.1007/s10854-013-1138-x ↗
8. 2016 · 1
9. 2013 · 192
10. J. Electron. Mater. · 2010 · 39 · 128310.1007/s11664-010-1195-3 ↗
11. 2017 · 263
12. J. Sci. Adv. Mater. Dev. · 2016 · 1 · 41310.1016/j.jsamd.2016.11.002 ↗
13. J. Electron. Mater. · 2013 · 42 · 126010.1007/s11664-013-2583-2 ↗
14. IEEE Trans. Compon., Packag., Manuf. Technol. · 2012 · 2 · 158710.1109/tcpmt.2012.2201940 ↗
15. J. Mater. Chem. · 2012 · 22 · 2519810.1039/c2jm34954j ↗
16. J. Electron. Mater. · 2017 · 46 · 457510.1007/s11664-017-5464-2 ↗
17. Scripta Mater. · 2018 · 150 · 710.1016/j.scriptamat.2018.02.029 ↗
18. ECS J. Solid State Sci. Technol. · 2013 · 2 · P27110.1149/2.010306jss ↗
19. Jpn. J. Appl. Phys. · 2017 · 56 · 04CC0110.7567/jjap.56.04cc01 ↗
20. IEEE Trans. Compon., Packag. Manuf. Technol. · 2014 · 4 · 95110.1109/tcpmt.2014.2315761 ↗
21. Microelectron. Reliab. · 2018 · 80 · 19810.1016/j.microrel.2017.12.012 ↗
22. Soldering Surf. Mount Technol. · 2014 · 26 · 810.1108/ssmt-10-2013-0028 ↗
23. Int. J. Electrochem. Sci. · 2015 · 10 · 491110.1016/S1452-3981(23)06675-0 ↗
24. J. Electrochem. Soc. · 2004 · 151 · G23010.1149/1.1648029 ↗