High-quality NbN nanofilms on a GaN/AlN heterostructure

Diane Sam-Giao; Stéphanie Pouget; Catherine Bougerol; Eva Monroy; Alexander Grimm; Salha Jebari; Max Hofheinz; J.-M. Gérard; Val Zwiller

doi:10.1063/1.4898327

journal article·2014-10-01Open access

High-quality NbN nanofilms on a GaN/AlN heterostructure

Diane Sam-Giao, Stéphanie Pouget, Catherine Bougerol, Eva Monroy, Alexander Grimm, Salha Jebari, Max Hofheinz, J.-M. Gérard, Val Zwiller

AIP Advances· Volume 4· Issue 10

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Source abstract

Abstract

We demonstrate high-quality monocrystalline NbN films deposited by DC magnetron sputtering on a GaN/AlN waveguiding heterostructure. NbN layers with a thickness of 8 nm are grown along the [111] direction, and show two orientation domains with NbN(111) [2-1-1]//AlN (0001) [10-10] and NbN(111) [2-1-1]//AlN(0001) [01-10] epitaxial relationships. Our NbN films display a critical temperature of 13.2 K, with the superconducting transition taking place in a temperature range of only 0.7 K.

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Research context

Nanomaterials

OpenAlex topics: GaN-based semiconductor devices and materials · Advanced Fiber Laser Technologies · Particle accelerators and beam dynamics

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Université Grenoble Alpes 1 , 38000 Grenoble, France

CEA-Grenoble, INAC/SP2M 2 , 17 avenue des Martyrs, 38054 Grenoble, France

CEA-Grenoble, INAC/SPSMS 3 , 17 avenue des Martyrs, 38054 Grenoble, France

Institut Néel-CNRS 4 , 25 avenue des Martyrs, 38042 Grenoble, France

Delft University of Technology 5 Kavli Institute of Nanoscience, , 2628 CJ Delft, The Netherlands

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