Internal quantum efficiency enhancement of GaInN/GaN quantum-well structures using Ag nanoparticles
Source abstract
Abstract
We report internal quantum efficiency enhancement of thin p-GaN green quantum-well structure using self-assembled Ag nanoparticles. Temperature dependent photoluminescence measurements are conducted to determine the internal quantum efficiency. The impact of excitation power density on the enhancement factor is investigated. We obtain an internal quantum efficiency enhancement by a factor of 2.3 at 756 W/cm2, and a factor of 8.1 at 1 W/cm2. A Purcell enhancement up to a factor of 26 is estimated by fitting the experimental results to a theoretical model for the efficiency enhancement factor.
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Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · Semiconductor Quantum Structures and Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Tokyo University of Science 1 Department of Applied Physics, , Katsushika, 125-8585 Tokyo, Japan
Technical University of Denmark 2 Department of Photonics Engineering, , 2800 Lyngby, Denmark
Meijo University 3 Faculty of Science and Technology, , 1-501 Shiogamaguchi Tempaku, 468-8502 Nagoya, Japan
Huazhong University of Science and Technology 4 School of Optical and Electronic Information, , 430074 Wuhan, China
Nagoya University 5 Akasaki Research Center, , Furo-cho Chikusa, 464-8603 Nagoya, Japan
References (33)
Show source-provided references
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