Tunnel magnetoresistance in thermally robust Mo/CoFeB/MgO tunnel junction with perpendicular magnetic anisotropy
Source abstract
Abstract
We report on tunnel magnetoresistance and electric-field effect in the Mo buffered and capped CoFeB/MgO magnetic tunnel junctions (MTJs) with perpendicular magnetic anisotropy. A large tunnel magnetoresistance of 120% is achieved. Furthermore, this structure shows greatly improved thermal stability and stronger electric-field-induced modulation effect in comparison with the Ta/CoFeB/MgO-based MTJs. These results suggest that the Mo-based MTJs are more desirable for next generation spintronic devices.
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Research context
OpenAlex topics: Magnetic properties of thin films · ZnO doping and properties · Heusler alloys: electronic and magnetic properties
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Chinese Academy of Sciences 1 Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics, , Ruoshui Road 398, Suzhou 215123, China
Chinese Academy of Sciences 2 Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, , Beijing 100190, China
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