Nanosecond-scale spectral diffusion in the single photon emission of a GaN quantum dot
Source abstract
Abstract
Autocorrelation measurements are used to reveal the spectral diffusion time scale in the single photon emission of a GaN interface fluctuation quantum dot. Typical characteristic diffusion times of such QDs are revealed to be of nanosecond order. The excitation power dependence of the diffusion rate is also investigated, whereby an increase in the diffusion rate with increasing excitation power is observed. This result provides information on experimental conditions that will be required for the generation of indistinguishable photons.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: Semiconductor Quantum Structures and Devices · GaN-based semiconductor devices and materials · Nanowire Synthesis and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Institute of Industrial Science (IIS), the University of Tokyo 1 , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
Spin Optics Laboratory, St. Petersburg State University 3 , St. Petersburg 198504, Russia
Institute for Nano Quantum Information Electronics (NanoQuine), the University of Tokyo 2 , 4-6-1 Komaba, Meguro-ku, Tokyo 153-8505, Japan
Funding
MEXT | Japan Society for the Promotion of Science
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