Compliance current dependence of conversion between bipolar, unipolar, and threshold resistance switching in Mn3O4 films

We report deterministic conversion between bipolar, unipolar and threshold resistance switching in Pt/Mn3O4/Pt memory devices via tuning compliance current. The conversion between bipolar and unipolar switching is reversible, while that between memory switching and threshold switching is irreversible. The nonvolatile bipolar resistance switching behaviors could be attributed to modification of Schottky barrier at Pt/Mn3O4 interface due to the migration of positively charged oxygen vacancies. With the increase of current, the incomplete filament formed in the set operation of bipolar switching could continue to grow and until completely form. The subsequent rupture and formation of filament consisting of oxygen vacancies under electric field are responsible for the unipolar resistance switching. Further increase of compliance current causes the volatile threshold switching behavior in the Pt/Mn3O4/Pt devices, which could be originated from formation and rupture of filament consisting of Mn ions due to the high Joule heat generated by large current.