journal article·2016-07-01Open access

In-plane magnetic field effect on switching voltage and thermal stability in electric-field-controlled perpendicular magnetic tunnel junctions

C. Grezes, A. Rojas Rozas, F. Ebrahimi, J. G. Alzate, X. Cai, J. A. Katine, J. Langer, B. Ocker, P. Khalili Amiri, K. L. Wang

AIP Advances· Volume 6· Issue 7

Abstract

The effect of in-plane magnetic field on switching voltage (Vsw) and thermal stability factor (Δ) are investigated in electric-field-controlled perpendicular magnetic tunnel junctions (p-MTJs). Dwell time measurements are used to determine the voltage dependence of the energy barrier height for various in-plane magnetic fields (Hin), and gain insight into the Hin dependent energy landscape. We find that both Vsw and Δ decrease with increasing Hin, with a dominant linear dependence. The results are reproduced by calculations based on a macrospin model while accounting for the modified magnetization configuration in the presence of an external magnetic field.
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Research context

OpenAlex topics: Magnetic properties of thin films · Quantum and electron transport phenomena · Physics of Superconductivity and Magnetism

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

University of California 1 Department of Electrical Engineering, , Los Angeles, California 90095, USA

Inston Inc. 2 , Los Angeles, California 90024, USA

HGST Inc. 3 , San Jose, California 95135, USA

Singulus Technologies AG 4 , Kahl am Main 63796, Germany

Funding

National Science Foundation · King Abdulaziz City for Science and Technology

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