Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals

Z.-S. Feng; Z.-H. Kang; X.-M. Li; Zeng-Bin Wang; J.-Y. Gao; Yu. M. Andreev; V. V. Atuchin; K. A. Kokh; G. V. Lanskii; A. I. Potekaev; A. V. Shaiduko; V. A. Svetlichnyi

doi:10.1063/1.4868626

journal article·2014-03-01Open access

Impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals

Z.-S. Feng, Z.-H. Kang, X.-M. Li, Zeng-Bin Wang, J.-Y. Gao, Yu. M. Andreev, V. V. Atuchin, K. A. Kokh, G. V. Lanskii, A. I. Potekaev, A. V. Shaiduko, V. A. Svetlichnyi

AIP Advances· Volume 4· Issue 3

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Source abstract

Abstract

The impact of fs and ns pulses on indium and sulfur doped gallium selenide crystals with four and five different doping concentrations, respectively, has been studied in comparison with that of undoped GaSe. The inconsistence of the visual criterion of the damage threshold determination has been demonstrated. The multiphoton absorption and thermal effect have been identified as key factors limiting fs and ns pulse pump intensities, respectively. High advantages in the limit pump intensity as up to 50% for optimally indium-doped crystal and up to 4.5 times for optimally sulfur-doped crystal have been demonstrated under fs pulses expose.

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Research context

OpenAlex topics: Solid-state spectroscopy and crystallography · Nonlinear Optical Materials Research · Optical and Acousto-Optic Technologies

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Affiliations

Jilin University 1 Key Laboratory of Coherent Light and Atomic and Molecular Spectroscopy of Ministry of Education and College of Physics, , 2519 Jie-Fang Rd., Changchun 130023, China

Aviation University of Air Force 2 , 2222 Nanhu Rd., Changchun 130022, China

Beijing Institute of Control Devices 3 Quantum Engineering Center, , Beijing 100854, China

Institute of Monitoring of Climatic and Ecological Systems 4 Laboratory of Geosphere-Biosphere Interactions, , SB RAS, 10/3 Academical Ave., Tomsk 634055, Russia

Siberian Physical-Technical Institute of the Tomsk State University 5 , 1 Novosobornaya Sq., Tomsk 634050, Russia

Institute of Semiconductor Physics 6 Laboratory of Optical Materials and Structures, , SB RAS, 13 Lavrentiev Ave., Novosibirsk, 630090, Russia

Tomsk State University 7 Functional Electronics Laboratory, , Tomsk 634050, Russia

Novosibirsk State University 8 , 2 Pirogov Str., Novosibirsk 630090, Russia

Institute of Geology and Mineralogy 9 Laboratory of Crystal Growth, , SB RAS, 3 Koptyug Ave., Novosibirsk 630090, Russia

Funding

RFBR

References (18)

Show source-provided references

1. 1999 · 141

2. High efficiency middle IR parametric superradiance in ZnGeP2 and GaSe crystals pumped by an erbium laser10.1016/0030-4018(91)90065-L ↗

3. Improved crystal quality and harmonic generation in GaSe doped with indium10.1364/OL.22.000775 ↗

4. SHG in doped GaSe:In crystals10.1364/OE.16.009978 ↗

5. Raman scattering from GaSe1-xTex10.1016/0038-1098(80)91248-X ↗

6. Growth, real structure and applications of GaSe1-xSx crystals10.1016/j.mseb.2005.12.012 ↗

7. SHG phase matching in GaSe and mixed GaSe1-xSx, x ≤ 0.412, crystals at room temperature10.1364/OE.16.009951 ↗

8. Growth and microstructure of heterogeneous crystal GaSe:InS10.1039/c2ce26474a ↗

9. Widely linear and non-phase-matched optics-to-THz conversion on GaSe:Te crystals10.1364/OL.37.000945 ↗

10. Tellurium and sulfur doped GaSe for mid-IR applications10.1007/s00340-012-5067-9 ↗

11. Modified GaSe crystals for laser systems applications

12. GaS0.4Se0.6: Relevant properties and potential for 1064 nm pumped mid-IR OPOs and OPGs operating above 5 μm10.1134/S1054660X11070255 ↗

13. Damage Threshold of Modified GaSe Crystals under Irradiation of Pulsed CO2 Laser with Inductive Energy Storage and SOS-diodes

14. AgGaS2- and Al-doped GaSe Crystals for IR Applications10.1016/j.optcom.2010.11.067 ↗

15. Radiation resistance of nonlinear crystals at a wavelength of 9.55 μm10.1070/QE2001v031n12ABEH002101 ↗

16. Application of a rotating heat field in Bridgman-Stockbarger crystal growth10.1016/j.jcrysgro.2004.11.299 ↗

17. On the absorption and reflection spectrum of amorphous selenium in the infrared region10.1007/BF01688862 ↗

18. Two-photon absorption in GaSe and CdGeAs210.1016/S0030-4018(98)00364-2 ↗