Trap-assisted transition between Schottky emission and Fowler-Nordheim tunneling in the interfacial-memristor based on Bi2S3 nano-networks
Abstract
Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neural dynamics and brain function · Ferroelectric and Negative Capacitance Devices
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Affiliations
School of Information and Electronics Engineering, Hunan City University 1 , Yiyang 413000, China
Hunan Province Higher Education Key Laboratory of Modeling and Monitoring on the Near-Earth Electromagnetic Environments, Changsha University of Science & Technology 2 , Changsha 410000, China
Photonic Research Group, Department of Information Technology, Ghent University-IMEC 3 , Ghent B 9000, Belgium
National Center for Nanoscience and Technology 4 , China. No. 11, Beiyitiao, Zhongguancun 100190, China
Funding
National Natural Science Foundation of China · China Scholarship Council · Natural Science Foundation of Hunan Province · Education Department of Hunan Province