GaN-on-diamond technology platform: Bonding-free membrane manufacturing process
Source abstract
Abstract
GaN-on-diamond samples were demonstrated using a membrane-based technology. This was achieved by selective area Si substrate removal of areas of up to 1 cm × 1 cm from a GaN-on-Si wafer, followed by direct growth of a polycrystalline diamond using microwave plasma chemical vapor deposition on etch exposed N-polar AlN epitaxial nucleation layers. Atomic force microscopy and transmission electron microscopy were used to confirm the formation of high quality, void-free AlN/diamond interfaces. The bond between the III-nitride layers and the diamond was validated by strain measurements of the GaN buffer layer. Demonstration of this technology platform is an important step forward for the creation of next generation high power electronic devices.
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Research context
OpenAlex topics: Metal and Thin Film Mechanics · Semiconductor materials and devices · GaN-based semiconductor devices and materials
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
School of Engineering, University of Glasgow 1 , Glasgow G12 8LT, United Kingdom
School of Engineering, Cardiff University 2 , Cardiff CF24 3AA, United Kingdom
Center for Device Thermography and Reliability (CDTR), H. H. Wills Physics Laboratory, University of Bristol 3 , Bristol BS8 1TL, United Kingdom
Department of Materials Science and Metallurgy, University of Cambridge 4 , 27 Charles Babbage Road, Cambridge CB3 0FS, United Kingdom
Funding
Engineering and Physical Sciences Research Council
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