journal article·2019-02-01Open access

Crystal structure and optical performance in bulk γ-InSe single crystals

Min Wu, Qiyun Xie, Yizhang Wu, Jiajin Zheng, Wei Wang, Liang He, Xiaoshan Wu, Bin Lv

AIP Advances· Volume 9· Issue 2

Abstract

High purity γ-phase InSe single crystals have been synthesized and characterized by XRD, SEM, EDS and TEM. Detailed temperature dependent Raman and photoluminescence spectroscopy suggests a small blue-shift as temperature decreases. The corresponding blue shift in Raman and photoluminescence can be explained in terms of self-energy and the lattice parameter change induced variation of band gap, respectively. Moreover, bulk InSe exhibits photoresponsivity in a wide spectrum from 400 to 990 nm. The maximum photoresponsivity reaches up to 8.82 mA/W under the wavelength of 800 nm, which is consistent with high absorption at the wavelength.
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Research context

OpenAlex topics: Chalcogenide Semiconductor Thin Films · Solid-state spectroscopy and crystallography · 2D Materials and Applications

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Affiliations

Key Laboratory of Radio Frequency and Micro-Nano Electronics of Jiangsu Province, Nanjing University of Posts & Telecommunications 1 , Nanjing 210023, China

National Laboratory of Solid State Microstructures, Nanjing University 2 , Nanjing 210093, China

Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, Collaborative Innovation Center of Advanced Microstructures, School of Electronic Science and Engineering, Nanjing University 3 , Nanjing 210093, China

Department of Applied Physics, Zhejiang University of Technology 4 , Hangzhou 310023, China

Funding

National Basic Research Program of China · National Key Research and Development Program of China · Postgraduate Research & Practice Innovation Program of Jiangsu Province · Scientific Research Foundation of Nanjing University of Posts & Telecommunications · National Natural Science Foundation of China

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