An evaluation of Fuchs-Sondheimer and Mayadas-Shatzkes models below 14nm node wide lines
Source abstract
Abstract
The applicability of the Fuchs-Sondheimer and Mayadas-Shatzkes scattering models below the 14nm node with wide interconnect trenches of variable aspect ratio is investigated. The aspect ratio of these lines was varied between 1.2, 1.8, and 2.5; and the grain structure was concurrently manipulated. As the vertical dimension varied from greater than and less than the mean free path in Cu (39nm) at 21°C, the experiment found that the current approximation to the Fuchs-Sondheimer equation requires adjustment to the leading coefficient. Further, parameter fitting leads to the conclusion that specularity in these samples has a negative value of -0.2. The negative specularity is explained by surface roughness. The Mayadas-Shatzkes model retains its applicability and fits the data with a reflectivity of 0.16-0.17.
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Research context
OpenAlex topics: Copper Interconnects and Reliability · Advanced Surface Polishing Techniques · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
GLOBALFOUNDRIES at Albany Nanotech 1 , Albany, New York 12203, USA
IBM at Albany Nanotech 2 , Albany, New York 12203, USA
IBM Research 3 , Yorktown Heights, New York 10598, USA
Funding
International Business Machines Corporation
References (37)
Show source-provided references
1. Advances in Physics · 1952 · 1 · 110.1080/00018735200101151 ↗
2. Proc. Royal Soc. · 1950 · 203 · 22310.1098/rspa.1950.0136 ↗
3. Proc. Cambridge Philos. Soc. · 1938 · 34 · 10010.1017/s0305004100019952 ↗
4. Phys. Rev. B · 1970 · 1 · 138210.1103/physrevb.1.1382 ↗
5. Proc. Roy. Soc. A · 1950 · 202 · 37810.1098/rspa.1950.0107 ↗
6. 2003 · 27
7. IEEE Electron Device Letters · 2015 · 36 · 38410.1109/led.2015.2404805 ↗
8. Phys. Rev. B · 2006 · 74 · 04541110.1103/physrevb.74.045411 ↗
9. J. App. Phys. · 2007 · 101 · 06370310.1063/1.2711385 ↗
10. J. App. Phys. · 2004 · 96 · 75910.1063/1.1757655 ↗
11. Applied Physics Letters · 2006 · 89 · 11312410.1063/1.2355435 ↗
12. J. Vac. Sci. Tech. · 2004 · 22 · 24010.1116/1.1642639 ↗
13. J. App. Phys. · 2018 · 123 · 15510710.1063/1.5020577 ↗
14. Jap. J. App. Phys. · 1970 · 9 · 132610.1143/jjap.9.1326 ↗
15. Phys. Rev. B · 2011 · 84 · 23542310.1103/physrevb.84.235423 ↗
16. Phys. Rev. B · 2009 · 79 · 041402R10.1103/physrevb.79.041402 ↗
17. Phys. Rev. B · 2010 · 81 · 15545410.1103/physrevb.81.155454 ↗
18. J. of Vacuum Science and Technology A · 2014 · 32 · 06150310.1116/1.4894453 ↗
19. Appl. Phys. Lett. · 2009 · 95 · 05211010.1063/1.3202418 ↗
20. Appl. Phys. Lett. · 2004 · 84 · 283810.1063/1.1703844 ↗
21. Phys. Rev. B · 2002 · 66 · 07541410.1103/physrevb.66.075414 ↗
22. Microelectronics Eng · 2006 · 83 · 239610.1016/j.mee.2006.10.044 ↗
23. J. Appl. Phys. · 2008 · 104 · 02370910.1063/1.2956703 ↗
24. J. Phys. D · 1997 · 30 · L510.1088/0022-3727/30/5/001 ↗
25. Thin Solid Films · 2001 · 384 · 15110.1016/s0040-6090(00)01818-6 ↗
26. Appl. Surf. Sci. · 2003 · 217 · 9510.1016/s0169-4332(03)00522-1 ↗
27. Microelectronics Reliability · 2009 · 49 · 12710.1016/j.microrel.2008.11.003 ↗
28. R Core Team · 2018
29. 1988
30. 1976 · 324
31. 2015 · 222
32. 2017 · 2
33. Gray · 1957
34. Annu. Rev. Mater. Res. · 2009 · 39 · 23110.1146/annurev-matsci-082908-145415 ↗
35. 1999
36. J. App. Phys · 1965 · 36 · 163210.1063/1.1703100 ↗
37. J. App. Phys. · 2017 · 122 · 02510710.1063/1.4992089 ↗