journal article·2016-05-01Open access

Perfect valley filter in strained graphene with single barrier region

Can Yesilyurt, Seng Ghee Tan, Gengchiau Liang, Mansoor B. A. Jalil

AIP Advances· Volume 6· Issue 5

Abstract

We present a single barrier system to generate pure valley-polarized current in monolayer graphene. A uniaxial strain is applied within the barrier region, which is delineated by localized magnetic field created by ferromagnetic stripes at the region’s boundaries. We show that under the condition of matching magnetic field strength, strain potential, and Fermi energy, the transmitted current is composed of only one valley contribution. The desired valley current can transmit with zero reflection while the electrons from the other valley are totally reflected. Thus, the system generates pure valley-polarized current with maximum conductance. The chosen parameters of uniaxial strain and magnetic field are in the range of experimental feasibility, which suggests that the proposed scheme can be realized with current technology.
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Research context

OpenAlex topics: Graphene research and applications · 2D Materials and Applications · Topological Materials and Phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

National University of Singapore 1 Electrical and Computer Engineering, , Singapore 117576, Republic of Singapore

Agency of Science, Technology and Research (A* Star) 2 Data Storage Institute, , Singapore 138634, Republic of Singapore

Funding

MOE Tier II · National University of Singapore · National Research Foundation Singapore

References (21)

Show source-provided references
1. Science · 2004 · 306 · 66610.1126/science.1102896 ↗
2. Rev. Mod. Phys. · 2009 · 81 · 10910.1103/RevModPhys.81.109 ↗
3. Int. J. Smart Nano Mater. · 2010 · 1 · 20110.1080/19475411.2010.510856 ↗
4. Phys. Rev. B · 81 · 20543710.1103/PhysRevB.81.205437 ↗
5. Prog. Theor. Phys. Suppl. · 2008 · 176 · 25310.1143/PTPS.176.253 ↗
6. Phys. Rev. Lett. · 2009 · 103 · 04680110.1103/PhysRevLett.103.046801 ↗
7. Prog. Theor. Phys. Suppl. · 2008 · 176 · 25310.1143/PTPS.176.253 ↗
8. J. Appl. Phys. · 2011 · 110 · 12130110.1063/1.3665219 ↗
9. Appl. Phys. Lett. · 2010 · 97 · 04350810.1063/1.3473725 ↗
10. App. Phys. Exp. · 2015 · 8 · 10520110.7567/APEX.8.105201 ↗
11. Nat. Phys. · 2007 · 3 · 17210.1038/nphys547 ↗
12. Phys. Status Solidi A · 2008 · 205 · 128110.1002/pssa.200778166 ↗
13. Appl. Phys. Lett. · 2009 · 95 · 06210710.1063/1.3205117 ↗
14. J. Phys.: Condens. Matter · 2009 · 21 · 04530110.1088/0953-8984/21/4/045301 ↗
15. Phys. Rev. Lett. · 2013 · 110 · 04660110.1103/PhysRevLett.110.046601 ↗
16. Phys. Rev. Lett. · 2011 · 106 · 13680610.1103/PhysRevLett.106.136806 ↗
17. Phys. Rev. B · 2010 · 82 · 11544210.1103/PhysRevB.82.115442 ↗
18. Appl. Phys. Lett. · 2014 · 104 · 08240110.1063/1.4866591 ↗
19. ACS Nano · 2008 · 2 · 230110.1021/nn800459e ↗
20. Phys. Rev. B · 2009 · 79 · 20543310.1103/PhysRevB.79.205433 ↗
21. J. Phys.: Condens. Matter · 2009 · 21 · 29220410.1088/0953-8984/21/29/292204 ↗