Influence of thickness on crystallinity in wafer-scale GaTe nanolayers grown by molecular beam epitaxy
Source abstract
Abstract
We grew wafer-scale, uniform nanolayers of gallium telluride (GaTe) on gallium arsenide (GaAs) substrates using molecular beam epitaxy. These films initially formed in a hexagonal close-packed structure (h-GaTe), but monoclinic (m-GaTe) crystalline elements began to form as the film thicknesses increased to more than approximately 90 nm. We confirmed the coexistence of these two crystalline forms using x-ray diffraction and Raman spectroscopy, and we attribute the thickness-dependent structural change to internal stress induced by lattice mismatch with the substrate and to natural lattice relaxation at the growth conditions.
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Research context
OpenAlex topics: 2D Materials and Applications · Perovskite Materials and Applications · Chalcogenide Semiconductor Thin Films
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
The State University of New York 1 Shared Instrumentation Laboratories, University at Buffalo, , Buffalo, New York 14260, USA
Vienna University of Technology 2 Institute for Solid State Electronics, Center for Micro- and Nanostructures, , Vienna, Austria
The State University of New York 3 Department of Electrical Engineering, University at Buffalo, , Buffalo, New York 14260, USA
The State University of New York 4 Department of Materials Design and Innovation, University at Buffalo, , Buffalo, New York 14260, USA
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