journal article·2019-08-01Open access

Resonant-tunneling-diode terahertz oscillator with a cylindrical cavity for high-frequency oscillation

Ryunosuke Izumi, Takumi Sato, Safumi Suzuki, Masahiro Asada

AIP Advances· Volume 9· Issue 8

Abstract

We proposed and fabricated resonant-tunneling-diode (RTD) terahertz oscillators integrated with a cylindrical cavity. Oscillation frequency of 3 THz is expected from theoretical analysis. As a preliminary experiment, the proposed oscillator was fabricated using electron-beam lithography with a three-layer-resist process. An oscillation of up to 1.79 THz was obtained in the fabricated oscillators, which was lower than the theoretical expectation. This was because of a parasitic capacitance of the metal post connecting the cavity and the RTD. Theoretical calculations, including this parasitic capacitance, agreed well with the experiment. The parasitic capacitance can be suppressed by adding a simple process to the cavity fabrication.
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Research context

OpenAlex topics: Terahertz technology and applications · Superconducting and THz Device Technology · Strong Light-Matter Interactions

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Electrical and Electronic Engineering, Tokyo Institute of Technology 1 , Tokyo 152-8552, Japan

Institute of Innovative Research, Tokyo Institute of Technology 2 , Tokyo 152-8552, Japan

Funding

MEXT | MEXT| JST | Industry-Academia Collaborative R&D · Scope, Ministry of Internal Affairs and Communications, Japan · Japan Society for the Promotion of Science · Core Research for Evolutional Science and Technology · Accelerated Innovation Research Initiative Turning Top Science and Ideas into High-Impact Values

References (15)

Show source-provided references
1. Nat. Photonics · 2007 · 1 · 9710.1038/nphoton.2007.3 ↗
2. Jpn. J. Appl. Phys. · 2015 · 54 · 12010110.7567/jjap.54.120101 ↗
3. Appl. Phys. Lett. · 1991 · 58 · 229110.1063/1.104902 ↗
4. IEEE Electron Device Lett. · 1997 · 18 · 21810.1109/55.568771 ↗
5. Appl. Phys. Lett. · 2011 · 99 · 23350610.1063/1.3667191 ↗
6. J. Infrared, Millimeter, and THz Waves · 2016 · 37 · 118510.1007/s10762-016-0321-6 ↗
7. J. Appl. Phys. · 2019 · 125 · 15160110.1063/1.5051007 ↗
8. Appl. Phys. Express · 2016 · 9 · 02410110.7567/apex.9.024101 ↗
9. . 2017
10. Jpn. J. Appl. Phys. · 2008 · 47 · 437510.1143/jjap.47.4375 ↗
11. Jpn. J. Appl. Phys. · 2010 · 49 · 02020810.1143/jjap.49.020208 ↗
12. AIP Advances · 2017 · 7 · 11522610.1063/1.5007093 ↗
13. 2015 · 09410310.7567/jjap.54.094103 ↗
14. J. Vac. Sci. Technol. B · 1998 · 16 · 6910.1116/1.589837 ↗
15. 2019