journal article·2017-05-01Open access

Spin transport in antiferromagnetic NiO and magnetoresistance in Y3Fe5O12/NiO/Pt structures

Yu-Ming Hung, Christian Hahn, Houchen Chang, Mingzhong Wu, Hendrik Ohldag, Andrew D. Kent

AIP Advances· Volume 7· Issue 5

Abstract

We have studied spin transport and magnetoresistance in yttrium iron garnet (YIG)/NiO/Pt trilayers with varied NiO thickness. To characterize the spin transport through NiO we excite ferromagnetic resonance in YIG with a microwave frequency magnetic field and detect the voltage associated with the inverse spin-Hall effect (ISHE) in the Pt layer. The ISHE signal is found to decay exponentially with the NiO thickness with a characteristic decay length of 3.9 nm. This is contrasted with the magnetoresistance in these same structures. The symmetry of the magnetoresistive response is consistent with spin-Hall magnetoresistance (SMR). However, in contrast to the ISHE response, as the NiO thickness increases the SMR signal goes towards zero abruptly at a NiO thickness of ≃ 4 nm, highlighting the different length scales associated with the spin-transport in NiO and SMR in such trilayers.
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Research context

OpenAlex topics: Magnetic properties of thin films · Magneto-Optical Properties and Applications · Quantum and electron transport phenomena

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

New York University 1 Department of Physics, , New York, New York 10003, USA

Colorado State University 2 Department of Physics, , Fort Collins, Colorado 80523, USA

Stanford Synchrotron Radiation Lightsource 3 , Menlo Park, California 94025, USA

Funding

Semiconductor Research Corporation · Basic Energy Sciences

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