DataVXAIP AdvancesPaper
journal article·2019-09-01Open access

Secondary electron emission characteristics of Al2O3 coatings prepared by atomic layer deposition

Junjiang Guo, Dan Wang, Yantao Xu, Xiangping Zhu, Kaile Wen, Guanghui Miao, Weiwei Cao, JinHai Si, Min Lu, Haitao Guo

AIP Advances· Volume 9· Issue 9
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Source abstract

Abstract

Secondary electron emission (SEE) plays a crucial role in the gain performance of devices, such as electron multipliers and microchannel plates (MCPs). Gain performance could be improved by increasing the secondary electron yield (SEY) of device surface. Al2O3 coating is an ideal material for SEE, benefiting from its high SEY. The Al2O3 coating deposited on inner device walls by atomic layer deposition (ALD) can improve the gain performance of devices. In this study, the SEE characteristics of Al2O3 coatings were investigated experimentally. A series of Al2O3 coatings with thicknesses of 1-30 nm were prepared on Si substrate through the ALD method. Then, the SEY of the coatings were quantified as a function of primary electron energy in the range of 100∼1500 eV. Furthermore, an equation describing the true SEY as a function of thickness was established by applying theory of Dionne’s SEE model. This work presents potential approach for controlling the SEE level of Al2O3 coatings through thickness adjustment and is crucial for comprehending the SEE of composite materials.
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Research context

CompositesMaterials processing

OpenAlex topics: Semiconductor materials and devices · Electron and X-Ray Spectroscopy Techniques · Photocathodes and Microchannel Plates

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

State Key Laboratory of Transient Optics and Photonics, Xi’an Institute of Optics and Precision Mechanics, Chinese Academy of Sciences 1 , Xi’an 710119, China

Key Laboratory for Physical Electronics and Devices of the Ministry of Education & Shaanxi Key Lab of Information Photonic Technique, School of Electronics & Information Engineering, Xi’an Jiaotong University 2 , Xi’an 710049, China

University of Chinese Academy of Sciences (UCAS) 3 , Beijing 100049, PR China

School of Microelectronics, Xi’an Jiaotong University 4 , Xi’an 710049, China

State Key Laboratory of Institute of High Energy Physics Chinese Academy of Sciences, University of Chinese Academy of Sciences 5 , Beijing 100049, China

National Key Laboratory of Science and Technology on Space Microwave, China Academy of Space Technology 6 , Xi’an 710100, China

Funding

National Key Research and Development Program of China

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