Resistive switching in memristive electrochemical metallization devices
Source abstract
Abstract
We report on resistive switching of memristive electrochemical metallization devices using 3D kinetic Monte Carlo simulations describing the transport of ions through a solid state electrolyte of an Ag/TiOx/Pt thin layer system. The ion transport model is consistently coupled with solvers for the electric field and thermal diffusion. We show that the model is able to describe not only the formation of conducting filaments but also its dissolution. Furthermore, we calculate realistic current-voltage characteristics and resistive switching kinetics. Finally, we discuss in detail the influence of both the electric field and the local heat on the switching processes of the device.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neural dynamics and brain function · Transition Metal Oxide Nanomaterials
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Affiliations
Institute of Theoretical Electrical Engineering, Ruhr University Bochum 1 , D-44780 Bochum, Germany
Electrodynamics and Physical Electronics Group Brandenburg University of Technology 2 , D-03046 Cottbus, Germany
Funding
Deutsche Forschungsgemeinschaft
References (29)
Show source-provided references
1. Recent progress in resistive random access memories: Materials, switching mechanisms, and performance10.1016/j.mser.2014.06.002 ↗
2. Double-barrier memristive devices for unsupervised learning and pattern recognition10.3389/fnins.2017.00091 ↗
3. Nanoionics-based resistive switching memories10.1038/nmat2023 ↗
4. Simulation of multilevel switching in electrochemical metallization memory cells10.1063/1.3673239 ↗
5. Compact modeling of conducting-bridge random-access memory (CBRAM)10.1109/ted.2011.2116120 ↗
6. Study of multilevel programming in programmable metallization cell (PMC) memory10.1109/ted.2009.2016019 ↗
7. Electrochemical simulation of filament growth and dissolution in conductive-bridging RAM (CBRAM) with cylindrical coordinates10.1109/iedm.2012.6479107 ↗
8. Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells10.1038/nmat4221 ↗
9. One-dimensional model of the programming kinetics of conductive-bridge memory cells10.1063/1.3623485 ↗
10. Effects of cooperative ionic motion on programming kinetics of conductive-bridge memory cells10.1063/1.3675870 ↗
11. A detailed study of the forming stage of an electrochemical resistive switching memory by KMC simulation10.1109/led.2011.2143691 ↗
12. Atomistic study of dynamics for metallic filament growth in conductive-bridge random access memory10.1039/c4cp04903a ↗
13. Understanding filamentary growth in electrochemical metallization memory cells using kinetic Monte Carlo simulations10.1039/c5nr02258d ↗
14. 2016 · 400
15. Kinetic simulation of filament growth dynamics in memristive electrochemical metallization devices10.1063/1.4936107 ↗
16. 2004 · 125
17. 2016 · 726
18. A new correlation for the specific heat of metals, metal oxides and metal fluorides as a function of temperature
19. Specific heat capacity of TiO2 nanoparticles
20. Thermal conductivity of the elements10.1063/1.3253100 ↗
21. Impact of Joule heating on the microstructure of nanoscale TiO2 resistive switching devices10.1063/1.4803033 ↗
22. The role of ion transport phenomena in memristive double barrier devices10.1038/srep35686 ↗
23. Resistive switching in TiO2 thin films
24. Nanoscale plasmon-enhanced spectroscopy in memristive switches10.1002/smll.201503165 ↗
25. SET kinetics of electrochemical metallization cells: Influence of counter-electrodes in SiO2/Ag based systems10.1088/1361-6528/aa5e59 ↗
26. Simulation of polarity independent RESET in electrochemical metallization memory cells
27. Nanobatteries in redox-based resistive switches require extension of memristor theory10.1038/ncomms2784 ↗
28. Electrochemical dynamics of nanoscale metallic inclusions in dielectrics10.1038/ncomms5232 ↗
29. Three-dimensional observation of the conductive filament in nanoscaled resistive memory devices10.1021/nl500049g ↗