Diode behavior in ultra-thin low temperature ALD grown zinc-oxide on silicon
Source abstract
Abstract
A thin-film ZnO(n)/Si(p+) heterojunction diode is demonstrated. The thin film ZnO layer is deposited by Atomic Layer Deposition (ALD) at different temperatures on a p-type silicon substrate. Atomic force microscopy (AFM) AC-in-Air method in addition to conductive AFM (CAFM) were used for the characterization of ZnO layer and to measure the current-voltage characteristics. Forward and reverse bias n-p diode behavior with good rectification properties is achieved. The diode with ZnO grown at 80°C exhibited the highest on/off ratio with a turn-on voltage (VON) ∼3.5 V. The measured breakdown voltage (VBR) and electric field (EBR) for this diode are 5.4 V and 3.86 MV/cm, respectively.
Source: crossref · Quality: baseline
Research context
OpenAlex topics: ZnO doping and properties · Thin-Film Transistor Technologies · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Masdar Institute of Science and Technology Abu Dhabi 1 Institute Center for Microsystems – Imicro, Department of Electrical Engineering and Computer Science (EECS), , United Arab Emirates
Bilkent University 2 Department of Electrical and Electronics Engineering, , 06800 Ankara, Turkey
Bilkent University 3 UNAM-National Nanotechnology Research Center and Institute of Materials Science and Nanotechnology, , 06800 Ankara, Turkey
References (17)
Show source-provided references
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