Disorder-free sputtering method on graphene
Source abstract
Abstract
Deposition of various materials onto graphene without causing any disorder is highly desirable for graphene applications. Especially, sputtering is a versatile technique to deposit various metals and insulators for spintronics, and indium tin oxide to make transparent devices. However, the sputtering process causes damage to graphene because of high energy sputtered atoms. By flipping the substrate and using a high Ar pressure, we demonstrate that the level of damage to graphene can be reduced or eliminated in dc, rf, and reactive sputtering processes.
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Research context
OpenAlex topics: Graphene research and applications · Semiconductor materials and devices · Ion-surface interactions and analysis
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National University of Singapore 1 Department of Electrical and Computer Engineering, , 117576, Singapore
National University of Singapore 2 Graphene Research Centre, , 117546, Singapore
Nanyang Technological University 3 Division of Physics and Applied Physics, School of Physical and Mathematical Sciences, , 637616, Singapore
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