DataVXAIP AdvancesPaper
journal article·2017-05Open access

High-quality and highly-transparent AlN template on annealed sputter-deposited AlN buffer layer for deep ultra-violet light-emitting diodes

Chia-Yen Huang, Pei-Yu Wu, Kai-Shiang Chang, Yun-Hsiang Lin, Wei-Chih Peng, Yem-Yeu Chang, Jui-Ping Li, Hung-Wei Yen, YewChung Sermon Wu, Hideto Miyake, Hao-Chung Kuo

AIP Advances· Volume 7· Issue 5
Publisher pageOpen full text
Source abstract

Abstract

A high-quality and highly-transparent AlN template was prepared by regrowth on a sputter-deposited AlN buffer layer. The buffer layer was thermally annealed and then underwent AlN regrowth in metalorganic chemical vapor deposition (MOCVD). The peakwidth of (002) and (102) plane x-ray rocking curve was 104 arcsec and 290 arcsec, respectively, indicating a threading dislocation density <5.0 × 108 cm−2. Dislocations were reduced via grain growth and morphological evolution. The absence of carbon impurity source in sputter deposition also resulted in an improved transparency. According to transmission and reflection measurements, the absorption rate of λ=280 nm emission propagating through the template was less than 6%.
Source: openalex_inverted_index · Quality: baseline

Research context

Materials processing

OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

Department of Materials Science and Engineering, National Chiao-Tung University, 1001 Ta Hsueh Rd., Hsinchu 300, Taiwan

Research and Development Center, Epistar Corporation, 21, Li-Hsin Rd., Hsinchu Science Park, Hsinchu 300, Taiwan

Advanced Technology Development Division, Crystalwise Technology Inc., No.8, Ke Bei 5th Rd., Jhunan Science Park, Miaoli County 35053, Taiwan

Department of Materials Science and Engineering, National Chiao-Tung University, No. 1, Sec. 4, Roosevelt Road, 10617 Taipei, Taiwan

Department of Electrical and Electronic Engineering, Mie University, 1577 Kurimamachiya, Tsu, Mie 514-8507, Japan

References (23)

Show source-provided references
1. 10.1038/nphoton.2007.29310.1038/nphoton.2007.293 ↗
2. 10.7567/jjap.53.10020910.7567/jjap.53.100209 ↗
3. 10.1002/pssc.20067475810.1002/pssc.200674758 ↗
4. 10.1063/1.295906410.1063/1.2959064 ↗
5. 10.1143/apex.5.05550410.1143/apex.5.055504 ↗
6. 10.1063/1.180115910.1063/1.1801159 ↗
7. 10.1002/pssc.20098260110.1002/pssc.200982601 ↗
8. 10.1016/j.jcrysgro.2009.07.02310.1016/j.jcrysgro.2009.07.023 ↗
9. 10.1016/j.matlet.2013.09.09610.1016/j.matlet.2013.09.096 ↗
10. 10.1016/j.jallcom.2016.12.12610.1016/j.jallcom.2016.12.126 ↗
11. 10.1002/pssa.20088096110.1002/pssa.200880961 ↗
12. 10.1016/j.jcrysgro.2009.01.02310.1016/j.jcrysgro.2009.01.023 ↗
13. 10.1016/j.jcrysgro.2006.10.12310.1016/j.jcrysgro.2006.10.123 ↗
14. 10.1039/c5ce01159k10.1039/c5ce01159k ↗
15. 10.7567/apex.9.02550110.7567/apex.9.025501 ↗
16. 10.1063/1.194736710.1063/1.1947367 ↗
17. 10.1016/j.jcrysgro.2016.08.02810.1016/j.jcrysgro.2016.08.028 ↗
18. 10.1002/(SICI)1521-3951(199911)216:1<659::AID-PSSB659>3.0.CO;2-T10.1002/(SICI)1521-3951(199911)216:1<659::AID-PSSB659>3.0.CO;2-T ↗
19. 10.1063/1.157121710.1063/1.1571217 ↗
20. 10.1063/1.217040710.1063/1.2170407 ↗
21. 10.1063/1.471762310.1063/1.4717623 ↗
22. 10.1063/1.472369310.1063/1.4723693 ↗
23. 10.1063/1.489578610.1063/1.4895786 ↗