Rate-limiting processes in the fast SET operation of a gapless-type Cu-Ta2O5 atomic switch
Source abstract
Abstract
The speed of the SET operation of a Cu/Ta2O5/Pt atomic switch from a high-resistance state to a low-resistance state was measured by transient current measurements under the application of a short voltage pulse. The SET time decreased exponentially with increasing pulse amplitude, reaching as low as 1 ns using moderate pulse voltages. This observation shows that oxide-based atomic switches hold potential for fast-switching memory applications. From a comparison with atomistic nucleation theory, Cu nucleation on the Pt electrode was found to be the likely rate-limiting process determining the SET time.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Ferroelectric and Negative Capacitance Devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
National Institute for Materials Science 1 International Center for Materials Nanoarchitectonics (WPI-MANA), , 1-1 Namiki, Tsukuba 305-0044, Japan
Japan Science and Technology Agency (JST) 2 Core Research for Evolutional Science and Technology (CREST), , Tokyo 102-0075, Japan
Research Center Jülich 3 Peter Gruenberg Institute, , 52074 Jülich, Germany
RWTH Aachen 4 Institut für Werkstoffe der Electrotechnik 2 (IWE2), , D-52074 Aachen, Germany
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