journal article·2013-12-01Open access

Enhancement in performance of polycarbazole-graphene nanocomposite Schottky diode

Rajiv K. Pandey, Arun Kumar Singh, Rajiv Prakash

AIP Advances· Volume 3· Issue 12

Abstract

We report formation of polycarbazole (PCz)–graphene nanocomposite over indium tin oxide (ITO) coated glass substrate using electrochemical technique for fabrication of high performance Schottky diodes. The synthesized nanocomposite is characterized before fabrication of devices for confirmation of uniform distribution of graphene nanosheets in the polymer matrix. Pure PCz and PCz-graphene nanocomposites based Schottky diodes are fabricated of configuration Al/PCz/ITO and Al/PCz-graphene nanocomposite/ITO, respectively. The current density–voltage (J-V) characteristics and diode performance parameters (such as the ideality factor, barrier height, and reverse saturation current density) are compared under ambient condition. Al/PCz-graphene nanocomposite/ITO device exhibits better ideality factor in comparison to the device formed using pure PCz. It is also observed that the Al/PCz-graphene nanocomposite/ITO device shows large forward current density and low turn on voltage in comparison to Al/PCz/ITO device.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Conducting polymers and applications · Semiconductor materials and interfaces · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Indian Institute of Technology (Banaras Hindu University) School of Materials Science and Technology, , Varanasi-221005, India

References (52)

Show source-provided references
1. Nat. Mater. · 2006 · 5 · 22210.1038/nmat1590 ↗
2. Science · 1998 · 280 · 174110.1126/science.280.5370.1741 ↗
3. Nano Lett. · 2008 · 8 · 376
4. Adv. Mater. · 2008 · 20 · 102310.1002/adma.200701550 ↗
5. J. Appl. Phys. · 2009 · 105 · 11450610.1063/1.3139277 ↗
6. Organ. Electron. · 2009 · 10 · 110.1016/j.orgel.2008.08.016 ↗
7. Curr. Appl. Phy. · 2001 · 1 · 35510.1016/S1567-1739(01)00035-9 ↗
9. Chem. Rev. · 2007 · 107 · 132410.1021/cr050149z ↗
10. Semicond. Sci. Technol. · 2011 · 26 · 03400110.1088/0268-1242/26/3/034001 ↗
11. Sensors · 2007 · 7 · 26710.3390/s7030267 ↗
12. J. Phys.: Confer. Series · 2013 · 421 · 01200410.1088/1742-6596/421/1/012004 ↗
13. Sens. Actuators B · 2012 · 171–172 · 96210.1016/j.snb.2012.06.010 ↗
14. J. Appl. Phys. · 2013 · 114 · 05430910.1063/1.4817288 ↗
15. Synt. Met. · 2011 · 161 · 48110.1016/j.synthmet.2010.12.031 ↗
16. Mater. Lett. · 2011 · 65 · 301610.1016/j.matlet.2011.06.036 ↗
17. Macromol. Rapid Commun. · 2009 · 30 · 125810.1002/marc.200900214 ↗
18. Nanotechnology. · 2012 · 23 · 31540110.1088/0957-4484/23/31/315401 ↗
19. Curr. Appl. Phys. · 2010 · 10 · 90010.1016/j.cap.2009.10.019 ↗
20. {IEEE} Electron Device Lett. · 2008 · 29 · 57110.1109/LED.2008.922730 ↗
21. Sens. Actuators B · 2005 · 107 · 27710.1016/j.snb.2004.10.011 ↗
22. J. Polym. Res. · 2004 · 11 · 26910.1007/s10965-005-2412-2 ↗
23. Prog Polym. Sci. · 2010 · 35 · 135010.1016/j.progpolymsci.2010.07.005 ↗
24. Nature · 2006 · 442 · 28210.1038/nature04969 ↗
25. Synth. Met. · 2005 · 151 · 20210.1016/j.synthmet.2005.04.009 ↗
26. Nat. Mater. · 2007 · 6 · 18310.1038/nmat1849 ↗
27. J. Nanosci Nanotechnol.10.1166/jnn.2013.8549 ↗
28. Jpn. J. Appl. Phys. · 2010 · 49 · 01AD06
29. {IEEE} Electron Device Lett. · 2011 · 32 · 59310.1109/LED.2011.2112330 ↗
30. Mater. Lett. · 2011 · 65 · 301610.1016/j.matlet.2011.06.036 ↗
31. ACS Nano · 2010 · 4 · 88710.1021/nn901660v ↗
32. Adv. Mater. · 2010 · 22 · 383910.1002/adma.200903697 ↗
33. J. Mater. Chem. · 2011 · 21 · 650610.1039/c1jm10308c ↗
34. RSC Advances · 2012 · 2 · 527710.1039/c2ra20206a ↗
35. RSC Advances · 2013 · 3 · 1571210.1039/c3ra41895b ↗
36. Acc. Chem. Res. · 1985 · 18 · 30910.1021/ar00118a005 ↗
37. Compos. Sci. Technol. · 2005 · 65 · 67710.1016/j.compscitech.2004.09.006 ↗
38. J. Appl. Phys. · 2003 · 94 · 262710.1063/1.1593218 ↗
39. Proc. IRE · 1957 · 45 · 122810.1109/JRPROC.1957.278528 ↗
40. Appl. Phys. Lett. · 1996 · 68 · 286710.1063/1.116351 ↗
41. Appl. Phys. Lett. · 1996 · 69 · 168010.1063/1.117026 ↗
42. IEEE Electron Device Lett. · 2002 · 23 · 53510.1109/LED.2002.802601 ↗
43. Appl. Phys. Lett. · 2004 · 84 · 104610.1063/1.1647273 ↗
44. J. Appl. Phy. · 2004 · 95 · 149710.1063/1.1636830 ↗
45. Curr. Appl. Phys. · 2003 · 3 · 22710.1016/S1567-1739(02)00220-1 ↗
46. Phys. Rev. · 1955 · 97 · 153810.1103/PhysRev.97.1538 ↗
47. Semicond. Sci. Technol. · 2001 · 16 · 97510.1088/0268-1242/16/12/305 ↗
48. Phys. Rev. · 1956 · 103 · 164810.1103/PhysRev.103.1648 ↗
49. J. Phys. D: Appl. Phys · 1970 · 3 · 15110.1088/0022-3727/3/2/308 ↗
50. Phys. Rev. B · 1998 · 58 · 749210.1103/PhysRevB.58.R7492 ↗
51. Chem. Mater. · 2007 · 19 · 544310.1021/cm7020214 ↗
52. Appl. Phy. Lett. · 2009 · 94 · 08111310.1063/1.3089687 ↗