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journal article·2013-08-01Open access

The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy

Yuanmin Du, Amit Kumar, Hui Pan, Kaiyang Zeng, Shijie Wang, Ping Yang, Andrew Thye Shen Wee

AIP Advances· Volume 3· Issue 8
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Abstract

The resistive switching characteristics of TiO2 thin films were investigated using conductive atomic force microscopy (CAFM) and Kelvin probe force microscopy (KPFM). The as-prepared TiO2 thin films were modulated into higher and lower resistance states by applying a local electric field. We showed that the resistive switching results from charge injection and release assisted by electro-migration of oxygen ions. An integrated model combined with filamentary and interfacial effects was utilized to elucidate the experimentally observed phenomenon.
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Research context

OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Electronic and Structural Properties of Oxides

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Affiliations

National University of Singapore 1 Department of Physics, , 2 Science Drive 3, Singapore 117542

National University of Singapore 2 Department of Mechanical Engineering, , Singapore 117576

Institute of High Performance Computing 3 , A*STAR (Agency for Science, Technology and Research), 1 Fusionopolis Way, Singapore 138632

Institute of Materials Research and Engineering 4 , A*STAR (Agency for Science, Technology and Research), 3 Research Link, Singapore 117602

National University of Singapore 5 Singapore Synchrotron Light Source (SSLS), , 5 Research Link, Singapore 117603

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