journal article·2019-05-01Open access

Origin of planar Hall effect in type-II Weyl semimetal MoTe2

D. D. Liang, Y. J. Wang, W. L. Zhen, J. Yang, S. R. Weng, X. Yan, Y. Y. Han, W. Tong, W. K. Zhu, L. Pi, C. J. Zhang

AIP Advances· Volume 9· Issue 5

Abstract

Besides the negative longitudinal magnetoresistance (MR), planar Hall effect (PHE) is a newly emerging experimental tool to test the chiral anomaly or nontrivial Berry curvature in Weyl semimetals (WSMs). However, the origins of PHE in various systems are not fully distinguished and understood. Here we perform a systematic study on the PHE and anisotropic MR (AMR) of Td-MoTe2, a type-II WSM. Although the PHE and AMR curves can be well fitted by the theoretical formulas, we demonstrate that the anisotropic resistivity arises from the orbital MR (OMR), instead of the negative MR as expected in the chiral anomaly effect. In contrast, the positive MR indicates that the large OMR dominates over the chiral anomaly effect. This explains why it is difficult to measure negative MR in type-II WSMs. We argue that the measured PHE can be related with the chiral anomaly only when the negative MR is simultaneously observed.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Topological Materials and Phenomena · 2D Materials and Applications · Graphene research and applications

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Anhui Province Key Laboratory of Condensed Matter Physics at Extreme Conditions, High Magnetic Field Laboratory, Chinese Academy of Sciences 1 , Hefei 230031, China

Hefei National Laboratory for Physical Sciences at Microscale, University of Science and Technology of China 2 , Hefei 230026, China

Institute of Physical Science and Information Technology, Anhui University 3 , Hefei 230601, China

Funding

National Key R&D Program of China · National Natural Science Foundation of China

References (31)

Show source-provided references
1. Phys. Rev. B · 2011 · 83 · 20510110.1103/physrevb.83.205101 ↗
2. Nature · 2015 · 527 · 49510.1038/nature15768 ↗
3. Phys. Rev. B · 2015 · 92 · 16110710.1103/physrevb.92.161107 ↗
4. Phys. Rev. B · 2016 · 94 · 12111310.1103/physrevb.94.121113 ↗
5. Phys. Rev. B · 2016 · 94 · 24111910.1103/physrevb.94.241119 ↗
6. Phys. Rev. X · 2016 · 6 · 03102110.1103/physrevx.6.031021 ↗
7. Nat. Phys. · 2016 · 12 · 110510.1038/nphys3871 ↗
8. Phys. Lett. · 1983 · 130 · 38910.1016/0370-2693(83)91529-0 ↗
9. Phys. Rev. B · 2013 · 88 · 10441210.1103/physrevb.88.104412 ↗
10. Nat. Commun. · 2016 · 7 · 1314210.1038/ncomms13142 ↗
11. Phys. Rev. Lett. · 2017 · 118 · 09660310.1103/physrevlett.118.096603 ↗
12. Phys. Rev. B · 2017 · 96 · 04111010.1103/physrevb.96.041110 ↗
13. Phys. Rev. Lett. · 2017 · 119 · 17680410.1103/physrevlett.119.176804 ↗
14. Phys. Rev. B · 2018 · 98 · 04110310.1103/physrevb.98.041103 ↗
15. Phys. Rev. B · 2018 · 97 · 20111010.1103/physrevb.97.201110 ↗
16. Phys. Rev. X · 2018 · 8 · 03100210.1103/physrevx.8.031002 ↗
17. Y. J. Wang, J. X. Gong, D. D. Liang, M. Ge, J. R. Wang, W. K. Zhu, and C. J.Zhang, preprint arXiv:1801.05929.
18. Phys. Rev. B · 2018 · 98 · 12110810.1103/physrevb.98.121108 ↗
19. Phys. Rev. Materials · 2019 · 3 · 01420110.1103/physrevmaterials.3.014201 ↗
20. Phys. Rev. B · 2018 · 98 · 04111410.1103/physrevb.98.041114 ↗
21. Phys. Rev. B · 2018 · 98 · 08110310.1103/physrevb.98.081103 ↗
22. Phys. Rev. Lett. · 2003 · 90 · 10720110.1103/physrevlett.90.107201 ↗
23. Phys. Rev. B · 2008 · 78 · 21240210.1103/physrevb.78.212402 ↗
24. Nat. Commun. · 2017 · 8 · 134010.1038/s41467-017-01474-8 ↗
25. Phys. Rev. B · 2016 · 94 · 23515410.1103/physrevb.94.235154 ↗
26. J. Alloys Compd. · 2007 · 442 · 21610.1016/j.jallcom.2006.09.157 ↗
27. Chin. Phys. Lett. · 2018 · 35 · 09710110.1088/0256-307x/35/9/097101 ↗
28. Nat. Mater. · 2015 · 14 · 28010.1038/nmat4143 ↗
29. Phys. Rev. X · 2015 · 5 · 03102310.1103/physrevx.5.031023 ↗
30. 1989
31. Sci. Rep. · 2018 · 8 · 1498310.1038/s41598-018-33258-5 ↗