Threshold switching behavior of Ag-Si based selector device and hydrogen doping effect on its characteristics
Source abstract
Abstract
The effect of hydrogen treatment on the threshold switching property in a Ag/amorphous Si based programmable metallization cells was investigated for selector device applications. Using the Ag filament formed during motion of Ag ions, a steep-slope (5 mV/dec.) for threshold switching with higher selectivity (∼105) could be achieved. Because of the faster diffusivity of Ag atoms, which are inside solid-electrolytes, the resulting Ag filament could easily be dissolved under low current regime, where the Ag filament possesses weak stability. We found that the dissolution process could be further enhanced by hydrogen treatment that facilitated the movement of the Ag atoms.
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Research context
OpenAlex topics: Advanced Memory and Neural Computing · Neuroscience and Neural Engineering · Semiconductor materials and devices
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Pohang University of Science and Technology (POSTECH) Department of Materials Science and Engineering, , 77 Cheongam-ro, Nam-gu, Pohang, 790-784, Republic of Korea
Funding
Samsung
References (20)
Show source-provided references
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