Crystal quality of two-dimensional gallium telluride and gallium selenide using Raman fingerprint
Source abstract
Abstract
We have established Raman fingerprint of GaTe and GaSe to investigate their crystal quality. As unencapsulated, they both oxidise in ambient conditions which can be detected in their Raman analysis. X-ray photoelectron spectroscopy (XPS) analysis shows a good agreement with Raman analysis. 50-nm-thick Al2O3 encapsulation layer deposited by atomic layer deposition (ALD) inhibits degradation in ambient conditions.
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Research context
OpenAlex topics: 2D Materials and Applications · Chalcogenide Semiconductor Thin Films · Perovskite Materials and Applications
SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.
Affiliations
Aalto University 1 Department of Micro and Nanosciences, , P.O. Box 13500 Aalto, FI-00076 Espoo, Finland
Aalto University 2 Department of Applied Physics, , P.O. Box 15100 Aalto, FI-00076 Espoo, Finland
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