A two-step process for growth of highly oriented Sb2Te3 using sputtering
Source abstract
Abstract
A two-step growth method is proposed for the fabrication of highly-oriented Sb2Te3 and related superlattice films using sputtering. We report that the quality and grain size of Sb2Te3 as well as GeTe/Sb2Te3 superlattice films strongly depend on the thickness of the room-temperature deposited and subsequently by annealing at 523 K Sb2Te3 seed layer. This result may open up new possibilities for the fabrication of two-dimensional electronic devices using layered chalcogenides.
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Research context
OpenAlex topics: Phase-change materials and chalcogenides · 2D Materials and Applications · Advanced Semiconductor Detectors and Materials
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Affiliations
Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba Central 5, 1-1-1 Higashi, Tsukuba 305-8565, Japan
Funding
Core Research for Evolutional Science and Technology, Japan Science and Technology Agency
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