journal article·2017-09-01Open access

Ohmic contacts on n-type β-Ga2O3 using AZO/Ti/Au

Patrick H. Carey, Jiancheng Yang, F. Ren, David C. Hays, S. J. Pearton, Soohwan Jang, Akito Kuramata, Ivan I. Kravchenko

AIP Advances· Volume 7· Issue 9

Abstract

AZO interlayers between n-Ga2O3 and Ti/Au metallization significantly enhance Ohmic contact formation after annealing at ≥ 300°C. Without the presence of the AZO, similar anneals produce only rectifying current-voltage characteristics. Transmission Line Measurements of the Au/Ti/AZO/Ga2O3 stacks showed the specific contact resistance and transfer resistance decreased sharply from as-deposited values with annealing. The minimum contact resistance and specific contact resistance of 0.42 Ω-mm and 2.82 × 10-5 Ω-cm2 were achieved after a relatively low temperature 400°C annealing. The conduction band offset between AZO and Ga2O3 is 0.79 eV and provides a favorable pathway for improved electron transport across this interface.
Source: crossref · Quality: baseline

Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Advanced Photocatalysis Techniques

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Department of Chemical Engineering, University of Florida 1 , Gainesville, FL 32611, USA

Department of Materials Science and Engineering, University of Florida 2 , Gainesville, FL 32611, USA

Department of Chemical Engineering, Dankook University 3 , Yongin 16890, Korea

Tamura Corporation 4 , Sayama, Saitama 350-1328, Japan and , Sayama, Saitama 350-1328, Japan

Novel Crystal Technology, Inc. 4 , Sayama, Saitama 350-1328, Japan and , Sayama, Saitama 350-1328, Japan

Center for Nanophase Materials Sciences, Oak Ridge National Laboratory 5 , Oak Ridge, Tennessee 37830, USA

Funding

Defense Threat Reduction Agency · National Research Foundation of Korea · Ministry of Science, ICT and Future Planning · U.S. Department of Energy · New Energy and Industrial Technology Development Organization

References (33)

Show source-provided references
1. Adv. Electron. Mat. · 2017 · 160035010.1002/aelm.201600350 ↗
2. ECS J. Solid State Sci. Technol. · 2017 · 6 · P35610.1149/2.0031707jss ↗
3. ECS J. Solid State Sci.Technol. · 2016 · 5 · P46810.1149/2.0061609jss ↗
4. Appl. Phys. Lett. · 2016 · 109 · 21350110.1063/1.4967931 ↗
5. IEEE Electron Dev. Lett · 2013 · 34 · 49310.1109/led.2013.2244057 ↗
6. J. Cryst. Growth · 2014 · 404 · 18410.1016/j.jcrysgro.2014.07.021 ↗
7. Appl. Phys. Lett. · 2014 · 104 · 20311110.1063/1.4879800 ↗
8. Semicond. Sci. Technol. · 2016 · 31 · 03400110.1088/0268-1242/31/3/034001 ↗
9. Appl. Phys. Lett. · 2017 · 110 · 14350510.1063/1.4979789 ↗
10. IEEE Electron Dev. Lett. · 2016 · 37 · 21210.1109/led.2015.2512279 ↗
11. Appl. Phys. Lett. · 2016 · 109 · 06210210.1063/1.4960651 ↗
12. Phys. Chem. Chem Phys. · 2016 · 18 · 1576010.1039/c6cp01987k ↗
13. IEEE Electron Dev. Lett. · 2016 · 37 · 90210.1109/led.2016.2568139 ↗
14. Appl. Phys. Lett. · 2016 · 109 · 13210310.1063/1.4963820 ↗
15. Appl. Phys. Express · 2015 · 8 · 01550310.7567/apex.8.015503 ↗
16. Appl. Phys. Lett. · 2016 · 108 · 12350310.1063/1.4944860 ↗
17. J. Appl. Phys. · 2011 · 110 · 06372010.1063/1.3642962 ↗
18. Hyperfine Interact · 2016 · 237 · 11710.1007/s10751-016-1326-1 ↗
19. J. Am. Chem. Soc. · 1951 · 73 · 159010.1021/ja01148a052 ↗
20. J. Chem. Phys. · 1965 · 42 · 395710.1063/1.1695868 ↗
21. Appl. Phys. Express · 2013 · 6 · 08650210.7567/apex.6.086502 ↗
22. J. Electron Mater. · 2016 · 46 · 205310.1007/s11664-016-5121-1 ↗
23. ECS J. Solid State Sci. Technol. · 2017 · 6 · Q305210.1149/2.0131702jss ↗
24. Appl. Phys. Lett. · 2012 · 101 · 13210610.1063/1.4755770 ↗
25. Jpn. J. Appl. Phys. · 2016 · 55 · 1202B710.7567/jjap.55.1202b7 ↗
26. Thin Solid Films · 2008 · 517 · 147410.1016/j.tsf.2008.09.059 ↗
27. J Mater Sci: Mater Electron · 2016 · 27 · 68510.1007/s10854-015-3804-7 ↗
28. Mol. Cryst. Liquid Cryst. · 2013 · 586 · 8210.1080/15421406.2013.851530 ↗
29. Current Appl. Phys. · 2012 · 12 · s5610.1016/j.cap.2012.05.027 ↗
30. J. Display Technol. · 2016 · 12 · 103310.1109/jdt.2016.2584779 ↗
31. J. Mater. Chem. A · 2014 · 2 · 664910.1039/c3ta15052f ↗
32. 2011
33. Vacuum · 2017 · 141 · 10310.1016/j.vacuum.2017.03.031 ↗