Charge trapping-detrapping induced resistive switching in Ba0.7Sr0.3TiO3

Intensive research has been devoted to the resistive switching phenomena observed in many transitional metal oxides because of its potential for non-volatile memory application. To clarify the underlying mechanism of resistive switching, a planar device can provide information that is not accessible in conventional vertical sandwich structures. Here we report the observation of resistive switching behavior in a Pt/Ba0.7Sr0.3TiO3/Pt planar device. Using in-situ scanning Kelvin probe microscopy, we demonstrate that charge trapping/detrapping around the Pt/Ba0.7Sr0.3TiO3 interface modulates the Schottky barrier, resulting in the observed resistive switching. The findings are valuable for the understanding of resistive switching in oxide materials.