Improving hole injection from p-EBL down to the end of active region by simply playing with polarization effect for AlGaN based DUV light-emitting diodes
Abstract
Research context
OpenAlex topics: GaN-based semiconductor devices and materials · Ga2O3 and related materials · ZnO doping and properties
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Affiliations
School of Electronics and Information Engineering, Hebei University of Technology, Key Laboratory of Electronic Materials and Devices of Tianjin 1 , 5340 Xiping Road, Beihen District, Tianjin 300401, People’s Republic of China
State Key Laboratory of Reliability and Intelligence of Electrical Equipment 2 , 5340 Xiping Road, Beichen District, Tianjin 300401, People’s Republic of China
Funding
Program for Top 100 Innovative Talents in Colleges and Universities of Hebei Province · Program for 100-Talent-Plan of Hebei Province · Suzhou Institute of Nano-Tech and Nano-BionicsResearch Fund of Chinese Academy of Science · Natural Science Foundation of Hebei Province