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journal article·2021-10-01Open access

Diamond/β-Ga2O3 pn heterojunction diodes fabricated by low-temperature direct-bonding

Phongsaphak Sittimart, Shinya Ohmagari, Takashi Matsumae, Hitoshi Umezawa, Tsuyoshi Yoshitake

AIP Advances· Volume 11· Issue 10
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Source abstract

Abstract

Heterojunctions consisting of p-type diamond substrates and thin exfoliated n-type β-Ga2O3 layers were fabricated at a low temperature using a direct-bonding technique. We have fabricated p+-diamond/n-Ga2O3 (p+–n) and p-diamond/n-Ga2O3 (p–n) structures with different B concentrations in diamond. The p+–n heterojunction exhibited Ohmic behavior, resulting from p+-diamond behaving as a metallic layer. As for the p–n heterojunction, it showed clear rectifying action as a conventional bipolar action with a rectifying ratio >108 at ±10 V and leakage current <10−12 A. The ideality factor and barrier height of the p–n heterojunctions were estimated to be 2.7 and 1.5 eV, respectively. Formation of the p–n junction was evidenced by comparing it with the Schottky junction. An energy band diagram of the p–n heterojunctions with staggered (type-II) band alignment was derived based on electrical investigations.
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Research context

OpenAlex topics: Ga2O3 and related materials · ZnO doping and properties · Electronic and Structural Properties of Oxides

SciVX discovery tags are terminology-based. OpenAlex topics are source-provided classifications.

Affiliations

Sensing System Research Center, National Institute of Advanced Industrial Science and Technology (AIST) 1 , 807-1 Shuku-machi, Tosu, Saga 841-0052, Japan

Department of Applied Science for Electronics and Materials, Kyushu University 2 , Kasuga-koen, Kasuga, Fukuoka 816-8580, Japan

Diamond Materials Team, Advanced Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology 3 , 1-8-31 Midorigaoka, Ikeda, Osaka 563-8577, Japan

Device Technology Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) 4 , 1-2-1 Namiki, Tsukuba, Ibaraki 305-8564, Japan

Funding

Japan Society for the Promotion of Science

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